Volume 17, Issue 9 | Journal of Materials Science: Materials in Electronics

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Volume 17, Issue 9

September 2006

Oxides in Electronics, Dedicated to Cyril Hogarth

Issue Editor:

Asim Ray

12 articles in this issue

Special Issue on oxides in electronics, dedicated to Cyril Hogarth
Asim Ray
Editorial Pages: 647 - 649
Fluorescence and infrared spectroscopy of electrochemically self assembled ZnO nanowires: evidence of the quantum confined Stark effect
S. Ramanathan
S. Patibandla
J. Anderson
OriginalPaper Pages: 651 - 655
Orientation dependence of dielectric and relaxor behaviour in Aurivillius phase BaBi₂Nb₂O₉ ceramics prepared by spark plasma sintering
Haixue Yan
Hongtao Zhang
Zhijian Shen
OriginalPaper Pages: 657 - 661
Electrical studies of semiconductor–dielectric interfaces
M. Jamal Deen
Benjamin Iñiguez
François Lime
OriginalPaper Pages: 663 - 683
Growth and characterization of HfO₂ high-k gate dielectric films by laser molecular beam epitaxy (LMBE)
Y. K. Lu
X. F. Chen
R. Gopalkrishnan
OriginalPaper Pages: 685 - 688
High-k gate oxide for silicon heterostructure MOSFET devices
S. K. Ray
R. Mahapatra
S. Maikap
OriginalPaper Pages: 689 - 710
Surface roughness and interface engineering for gate dielectrics on strained layers
C. K. Maiti
S. K. Samanta
S. Chattopadhyay
OriginalPaper Pages: 711 - 722
Chemical and sol–gel processing of tellurite glasses for optoelectronics
S. N. B. Hodgson
L. Weng
OriginalPaper Pages: 723 - 733
The evolution of oxide cathodes for cathode ray tube applications
D. S. Barratt
S. N. Jenkins
OriginalPaper Pages: 735 - 743
Redox properties of a green emitting ZnGa₂O₄:Mn low voltage cathodoluminescent phosphor
R. Withnall
A. L. Lipman
J. Silver
OriginalPaper Pages: 745 - 753
A model of non-Ohmic conduction in ZnO varistors
A. B. Glot
OriginalPaper Pages: 755 - 765
Development of high sensitivity oxide based strain gauges and pressure sensors
K. Arshak
D. Morris
O. Korostynska
OriginalPaper Pages: 767 - 778