1. Editorial

   Editorial Introduction Pages: 5 - 5

2. Confined epitaxial growth by low-pressure chemical vapor deposition

   • K. Osman
   • N. S. Lloyd
   • J. S. Hamel

   OriginalPaper Pages: 257 - 260

3. Non-selective growth of SiGe heterojunction bipolar trasistor layers at 700 °C with dual control of n- and p-type dopant profiles

   • H. A. W. El Mubarek
   • J. M. Bonar
   • S. Hall

   OriginalPaper Pages: 261 - 265

4. Misfit dislocations in GaAsN/GaAs interface

   • J. Toivonen
   • T. Tuomi
   • D. Lowney

   OriginalPaper Pages: 267 - 270

5. AlGaN/GaN HEMTS: material, processing, and characterization

   • F. Calle
   • T. Palacios
   • I. Moerman

   OriginalPaper Pages: 271 - 277

6. High-temperature strength of bulk single crystals of III-V nitrides

   • I. Yonenaga

   OriginalPaper Pages: 279 - 281

7. Tilted-wing-induced stress distribution in epitaxial lateral overgrown GaN

   • W. M. Chen
   • P. J. McNally
   • J. Toivonen

   OriginalPaper Pages: 283 - 286

8. Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films

   • H. Castán
   • S. Dueñas
   • G. González-Díaz

   OriginalPaper Pages: 287 - 290

9. Structural and optical characterization of CuInS₂ thin films grown by vacuum evaporation method

   • Y. Akaki
   • H. Komaki
   • T. Ikari

   OriginalPaper Pages: 291 - 294

10. Effect of high hydrostatic pressure during annealing on silicon implanted with oxygen

    • A. Misiuk
    • A. Barcz
    • L. Bryja

    OriginalPaper Pages: 295 - 298

11. Transfer of thin Si layers by cold and thermal ion cutting

    • K. Henttinen
    • T. Suni
    • S. S. Lau

    OriginalPaper Pages: 299 - 303

12. Transformation of hydrogen trapped onto microbubbles into H platelet layer in SI

    • A. Y. Usenko
    • W. N. Carr
    • Bo Chen

    OriginalPaper Pages: 305 - 309

13. Capacitance and current–voltage simulation of EEPROM technology highly doped MOS structures

    • S. Croci
    • C. Plossu
    • P. Boivin

    OriginalPaper Pages: 311 - 314

14. Rapid thermal annealing of Cu/WN _x /Si structures

    • A. Lipsanen
    • P. Kuivalainen
    • S. Franssila

    OriginalPaper Pages: 315 - 318

15. Realization of electroplating molds with thick positive SPR 220-7 photoresist

    • E. Kukharenka
    • M. Kraft

    OriginalPaper Pages: 319 - 322

16. Self-assembled germanium islands grown on (0 0 1) silicon substrates by low-pressure chemical vapor deposition

    • G. D. M. Dilliway
    • D. M. Bagnall
    • C. Jeynes

    OriginalPaper Pages: 323 - 327

17. Low-temperature plasma-enhanced chemical vapor deposition of tungsten and tungsten nitride

    • M. F. Bain
    • B. M. Armstrong
    • H. S. Gamble

    OriginalPaper Pages: 329 - 332

18. Copper nanoparticles within amorphous and crystalline dielectric matrices

    • V. S. Gurin
    • D. L. Kovalenko
    • N. E. Bogdanchikova

    OriginalPaper Pages: 333 - 336

19. Growth and magnetic properties of MnGe films for spintronic application

    • N. Pinto
    • L. Morresi
    • A. Verna

    OriginalPaper Pages: 337 - 340

20. Infrared absorption of a-SiC : H as a function of the annealing temperature

    • R. Murri
    • N. Pinto
    • U. Coscia

    OriginalPaper Pages: 341 - 344

21. Spectroellipsometric studies of 0.9PbMg_1/3Nb_2/3O₃-0.1PbTiO₃ thin films

    • W. S. Tsang
    • F. F. Hau
    • K. H. Wong

    OriginalPaper Pages: 345 - 348

22. In(Ga)As quantum dots on Ge substrate

    • L. Knuuttila
    • K. Kainu
    • H. Lipsanen

    OriginalPaper Pages: 349 - 352

23. Formation kinetics and structure of self-assembled poly(3-alkylthiophene) films on gold surface

    • T. Matsuura
    • H. Sakaguchi
    • Y. Shimoyama

    OriginalPaper Pages: 353 - 356

24. Photoluminescence study of strain-induced GaInNAs/GaAs quantum dots

    • H. Koskenvaara
    • T. Hakkarainen
    • M. Sopanen

    OriginalPaper Pages: 357 - 360

25. Atomic layer deposition of HfO₂ thin films and nanolayered HfO₂–Al₂O₃–Nb₂O₅ dielectrics

    • Kaupo Kukli
    • Mikko Ritala
    • Lata Prabhu

    OriginalPaper Pages: 361 - 367

26. Relaxor ferroelectric thin-film heterostructures: Scaling of dielectric properties

    • M. Tyunina
    • J. Levoska
    • S. Leppävuori

    OriginalPaper Pages: 369 - 374

27. A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide

    • S. Dueñas
    • H. Castán
    • G. González-Díaz

    OriginalPaper Pages: 375 - 378

28. Surface treatment for high-quality Al₂O₃ and HfO₂ layers deposited on HF-dipped surface by atomic layer deposition

    • J.-F. Damlencourt
    • O. Renault
    • F. Bedu

    OriginalPaper Pages: 379 - 382

29. Electrical and microstructural properties of Bi_2−x Sb _x Te and Bi_2−x Sb _x Te₂ foils obtained by the ultrarapid quenching process

    • E. Kukharenka
    • N. Fréty
    • J. C. Tédenac

    OriginalPaper Pages: 383 - 388

30. Polyaniline films deposited by anodic polymerization: Properties and applications to chemical sensing

    • L. Grigore
    • M. C. Petty

    OriginalPaper Pages: 389 - 392

31. Planar chiral meta-materials for photonic devices

    • A. Potts
    • A. Papakostas
    • D. M. Bagnall

    OriginalPaper Pages: 393 - 395

32. Effects of molecular shape on the photoluminescence of dyes embedded in a chiral polymer with a photonic band gap

    • K. Bjorknas
    • P. Raynes
    • S. Gilmour

    OriginalPaper Pages: 397 - 401

33. Growth of GaAs on polycrystalline silicon-on-insulator

    • J. Riikonen
    • A. Säynätjoki
    • J. Ahopelto

    OriginalPaper Pages: 403 - 405

34. Low-temperature PECVD deposition of highly conductive microcrystalline silicon thin films

    • A. M. Nardes
    • A. M. de Andrade
    • E. N. S. Muccillo

    OriginalPaper Pages: 407 - 411

35. Photonic band gaps in 12-fold symmetric quasicrystals

    • B. P. Hiett
    • D. H. Beckett
    • K. S. Thomas

    OriginalPaper Pages: 413 - 416

36. Optical waveguides on polysilicon-on-insulator

    • A. Säynätjoki
    • J. Riikonen
    • J. Ahopelto

    OriginalPaper Pages: 417 - 420

37. Nonradiative electron–hole recombination in ZnSSe epitaxial layers examined by piezoelectric photothermal spectroscopy

    • K. Yoshino
    • A. Memon
    • K. Ando

    OriginalPaper Pages: 421 - 425

38. A batch process to deposit amorphous metallic Mo–Si–N films

    • H. Kattelus
    • H. Heikkinen
    • A. Tolkki

    OriginalPaper Pages: 427 - 430

39. Piezoelectric ZnO films by r.f. sputtering

    • J. Molarius
    • J. Kaitila
    • M. Ylilammi

    OriginalPaper Pages: 431 - 435

40. Radiation damage induced in Si photodiodes by high-temperature neutron irradiation

    • H. Ohyama
    • K. Takakura
    • T. Kishikawa

    OriginalPaper Pages: 437 - 440

41. Micro-Raman investigations of the degree of relaxation in thin SiGe buffer layers with high Ge content

    • T. S. Perova
    • R. Maurice
    • E. Kasper

    OriginalPaper Pages: 441 - 444

42. Correlating integrated circuit process-induced strain and defects against device yield and process control monitoring data

    • M. Karilahti
    • T. Tuomi
    • A. N. Danilewsky

    OriginalPaper Pages: 445 - 449

43. Influence of irradiation temperature on electron-irradiated STI Si diodes

    • H. Ohyama
    • K. Hayama
    • C. Claeys

    OriginalPaper Pages: 451 - 454

44. Stress characterization of device layers and the underlying Si_1−x Ge _x virtual substrate with high-resolution micro-Raman spectroscopy

    • W. M. Chen
    • P. J. McNally
    • A. F. W. Willoughby

    OriginalPaper Pages: 455 - 458

45. 3D atomic imaging of SiGe system by X-ray fluorescence holography

    • K. Hayashi
    • Y. Takahashi
    • N. Usami

    OriginalPaper Pages: 459 - 462