Editorial for Journal of Materials Science: Materials in Electronics Arthur Willoughby Editorial Introduction Pages: 5 - 5
Electrical characterization of shallow cobalt-silicided junctions E. SimoenA. PoyaiE. Gaubas OriginalPaper Pages: 207 - 210
Processing factors influencing the leakage current in shallow junction diodes for deep submicro-meter CMOS L. GrauE. AugendreA. Romano-Rodriguez OriginalPaper Pages: 211 - 214
Novel materials for thermal via incorporation into SOI structures P. BaineKhor Yeap ChoonS. J. N. Mitchell OriginalPaper Pages: 215 - 218
Antimony and boron diffusion in SiGe and Si under the influence of injected point defects J. M. BonarA. F. W. WilloughbyM. G. Dowsett OriginalPaper Pages: 219 - 221
Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic pressure V. V. Emtsev JrC. A. J. AmmerlaanC. A. Londos OriginalPaper Pages: 223 - 225
Radiation damage of N-MOSFETS fabricated in a BiCMOS process K. KobayashiH. OhyamaS. Kohiki OriginalPaper Pages: 227 - 230
An electron paramagnetic resonance study of defects in PECVD silicon oxides R. C. BarklieM. CollinsI. Borde OriginalPaper Pages: 231 - 234
Fully relaxed Si0.7Ge0.3 buffers grown on patterned silicon substrates for hetero-CMOS transistors G. WöhlE. KasperF. Ernst OriginalPaper Pages: 235 - 240
Evaluation of the infrared absorption in nm-thick heavily boron-doped Si1-xGex layers on silicon A. CavacoN. A. SobolevU. König OriginalPaper Pages: 241 - 243
Band offsets and electron transport calculation for strained Si1-x-yGexCy/Si heterostructures P. DollfusS. GaldinH. J. Osten OriginalPaper Pages: 245 - 248
Examination of the structural and optical failure of ultra-bright LEDs under varying degrees of electrical stress using synchrotron X-ray topography and optical emission spectroscopy D. LowneyP. J. McNallyA. N. Danilewsky OriginalPaper Pages: 249 - 253
Tunneling statistics and the manufacturability of semiconductor tunnel devices R. K. HaydenM. J. Kelly OriginalPaper Pages: 255 - 257
Raman active E2 modes in aluminum nitride films I. C. OliveiraC. OtaniM. L. A. Temperini OriginalPaper Pages: 259 - 262
C–V, DLTS and conductance transient characterization of SiNx:H/InP interface improved by N2 remote plasma cleaning of the InP surface H. CastánS. DueñasG. González-Díaz OriginalPaper Pages: 263 - 267
Electrical characterization of deep levels in N and P 6H-SiC Schottky diodes N. SghaierA. K. SouifiG. Guillot OriginalPaper Pages: 273 - 276
Studies of the formation of Ga and Al wires on Si(1 1 2) facet surfaces S. M. ProkesO. J. Glembocki OriginalPaper Pages: 277 - 283
Novel fabrication methods for submicrometer Josephson junction qubits A. PottsP. R. RoutleyP. A. J. de Groot OriginalPaper Pages: 289 - 293
High-resolution X-ray diffraction and fast routine evaluation of graded hetero-epitaxial layers J. F. Woitok OriginalPaper Pages: 295 - 298
Magnetic nanoparticles and nanoparticle assemblies from metallorganic precursors Y. K. Gun'koS. C. PillaiD. McInerney OriginalPaper Pages: 299 - 302
LPCVD of tungsten by selective deposition on silicon F. X. LiB. M. ArmstrongH. S. Gamble OriginalPaper Pages: 303 - 306
Surface electromigration of sputtered copper patterned using ion milling or chemical mechanical polishing B. H. W. TohN. D. McCuskerV. Len OriginalPaper Pages: 307 - 312
Al/Si contacting of ultra-shallow epitaxially grown Si and SiGe junctions Q. W. RenL. K. NanverJ. W. Slotboom OriginalPaper Pages: 313 - 316
DLTS and conductance transient investigation on defects in anodic tantalum pentoxide thin films S. DueñasH. CastánP. A. Sullivan OriginalPaper Pages: 317 - 321
Growth and characterization of shape memory alloy thin films for Si microactuator technologies N. YaakoubiC. SerreN. Frantz-Rodriguez OriginalPaper Pages: 323 - 326
Characterization of CVD tungsten deposited by silane reduction M. F. BainB. M. ArmstrongH. S. Gamble OriginalPaper Pages: 327 - 331
Effect of nitridation on Fowler–Nordheim tunneling coefficients in SiO2 MOS capacitors with WSi2-polysilicon gate S. CrociC. PlossuP. Boivin OriginalPaper Pages: 333 - 338
Electrical detection and simulation of stress in silicon nitride spacer technology H. W. van ZeijlS. MijalcovicL. K. Nanver OriginalPaper Pages: 339 - 341
Electrical and structural characterization of DLC films deposited by magnetron sputtering M. MassiH. S. MacielP. Verdonck OriginalPaper Pages: 343 - 346
Dielectric properties of thin solid films formed on silicon P. C. FanninT. S. PerovaH. S. Gamble OriginalPaper Pages: 347 - 350
Spectroscopic characteristics of SiO and SiO2 solid films: Assignment and local field effect influence I. I. ShaganovT. S. PerovaK. Berwick OriginalPaper Pages: 351 - 355