1. Evaluation of high temperature dielectric films for high voltage power electronic applications

   • J. L. Suthar
   • J. R. Laghari

   Papers Pages: 77 - 81

2. Reaction sequences in the systems Ti(OⁱPr)₄ + Ba(CH₃COO)₂ and TiO₂ + Ba(CH₃COO)₂

   • J. P. Grammatico
   • J. M. Porto Lopez

   Papers Pages: 82 - 86

3. Effects of the reaction parameters on the deposition characteristics in ZrO₂ CVD

   • Joon-Hoo Choi
   • Ho-Gi Kim
   • Soon-Gil Yoon

   Papers Pages: 87 - 92

4. Relation between thermal conductivity, sintering mechanism and microstructure of AIN with yttrium aluminate grain boundary phases

   • W. E. Lee
   • S. -K. Chiang
   • P. T. B. Shaffer

   Papers Pages: 93 - 101

5. Some properties of the first non-aqueous electro-codeposited InP, In and P thin films

   • S. N. Sahu

   Papers Pages: 102 - 106

6. Dislocation generation in silicon during CMOS device processing

   • P. J. Halfpenny

   Papers Pages: 107 - 112

7. Understanding doped V₂O₃ as a functional positive temperature coefficient material

   • B. C. Hendrix
   • X. Wang
   • W. Q. Cui

   Papers Pages: 113 - 119

8. Preparation and characterization of superconducting (YBa₂Cu₃O _x -Ag) composites obtained by sol-gel method

   • P. K. Pal
   • S. Molla
   • B. K. Chaudhuri

   Papers Pages: 120 - 123

9. Temperature dependence of the electrical conductivity of Salicylaldazinate metal chelates

   • B. A. El-Sayed
   • M. M. El-Desoky
   • M. B. Sayed

   Papers Pages: 124 - 126

10. Possibilities for formation of the 110 K phase 2223 in Sb or V doped Bi-Sr-Ca-Cu-O and Bi-Pb-Sr-Ca-Cu-O materials

    • K. Konstantinov
    • D. Kovacheva
    • V. Kovachev

    Papers Pages: 127 - 131

11. Use of AgInTe₂ for optoelectronic switching at higher frequencies

    • R. Shukla
    • P. Khurana
    • K. K. Srivastava

    Papers Pages: 132 - 137