1. An empirical density of states and joint density of states analysis of hydrogenated amorphous silicon: a review

   • Stephen Karrer O'Leary

   OriginalPaper Pages: 401 - 410

2. Structural properties of relaxed Ge buffer layers on Si(0 0 1): effect of layer thickness and low temperature Si initial buffer

   • T. Myrberg
   • A. P. Jacob
   • D. Bensahel

   OriginalPaper Pages: 411 - 417

3. Electrochemical studies of n-Cd_1−xMn_xSe thin film photodetector

   • V. S. Karande
   • S. H. Mane
   • A. R. Wadgaonkar

   OriginalPaper Pages: 419 - 423

4. Properties and structure of semiconducting sodium iron germanoborate glasses

   • M. M. El-Desoky
   • Sherief M. Abo-Naf

   OriginalPaper Pages: 425 - 433

5. Preparation and characterization of gold/poly(vinyl alcohol)/MoS₂ intercalation nanocomposite

   • Tingmei Wang
   • Weimin Liu
   • Jun Tian

   OriginalPaper Pages: 435 - 438

6. Electrical, optical and structural characterization of high-k dielectric ZrO₂ thin films deposited by the pyrosol technique

   • G. Reyna-García
   • M. García-Hipólito
   • C. Falcony

   OriginalPaper Pages: 439 - 446

7. Dissolution kinetics and diffusivity of silver in glassy layers for hybrid microelectronics

   • M. Prudenziati
   • B. Morten
   • M. Leoni

   OriginalPaper Pages: 447 - 453

8. Redistribution of P atoms in oxidized P-implanted silicon during annealing

   • Katsuhiro Yokota*
   • Makoto Aoki
   • Masanori Watanabe

   OriginalPaper Pages: 455 - 461

9. Tungsten-oxide thin films as novel materials with high sensitivity and selectivity to NO₂, O₃ and H₂S. Part I: Preparation and microstructural characterization of the tungsten-oxide thin films

   • O. Berger
   • W.-J. Fischer
   • V. Melev

   OriginalPaper Pages: 463 - 482

10. Tungsten-oxide thin films as novel materials with high sensitivity and selectivity to NO₂, O₃, and H₂S. Part II: Application as gas sensors

    • O. Berger
    • T. Hoffmann
    • V. Melev

    OriginalPaper Pages: 483 - 493