1. Guest editorial

   News 07 November 2009 Pages: 173 - 173

2. Monte Carlo simulation of nanoelectronic devices

   • F. Gamiz
   • A. Godoy
   • F. Jimenez-Molinos

   OriginalPaper 15 October 2009 Pages: 174 - 191

3. Modeling of modern MOSFETs with strain

   • V. Sverdlov
   • O. Baumgartner
   • S. Selberherr

   OriginalPaper 22 October 2009 Pages: 192 - 208

4. Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering

   • D. Esseni
   • F. Conzatti
   • L. Selmi

   OriginalPaper 29 August 2009 Pages: 209 - 224

5. A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion

   • S.-M. Hong
   • C. Jungemann

   OriginalPaper 01 October 2009 Pages: 225 - 241

6. On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs

   • Anh-Tuan Pham
   • Christoph Jungemann
   • Bernd Meinerzhagen

   OriginalPaper 15 October 2009 Pages: 242 - 266

7. Ballistic quantum transport using the contact block reduction (CBR) method

   • Stefan Birner
   • Christoph Schindler
   • Peter Vogl

   OriginalPaper 03 October 2009 Pages: 267 - 286

8. A new F(ast)-CMS NEGF algorithm for efficient 3D simulations of switching characteristics enhancement in constricted tunnel barrier silicon nanowire MuGFETs

   • Aryan Afzalian
   • Nima Dehdashti Akhavan
   • Jean-Pierre Colinge

   OriginalPaper 01 September 2009 Pages: 287 - 306

9. Modeling drive currents and leakage currents: a dynamic approach

   • Wim Magnus
   • Fons Brosens
   • Bart Sorée

   OriginalPaper 29 September 2009 Pages: 307 - 323

10. Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport

    • Damien Querlioz
    • Huu-Nha Nguyen
    • Philippe Dollfus

    OriginalPaper 19 August 2009 Pages: 324 - 335

11. Quantum transport including nonparabolicity and phonon scattering: application to silicon nanowires

    • Aniello Esposito
    • Martin Frey
    • Andreas Schenk

    OriginalPaper 21 July 2009 Pages: 336 - 348

12. Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques

    • Asen Asenov
    • Andrew R. Brown
    • Scott Roy

    OriginalPaper 19 September 2009 Pages: 349 - 373

13. Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs

    • Marco G. Pala
    • Claudio Buran
    • Mireille Mouis

    OriginalPaper 15 September 2009 Pages: 374 - 381

14. Nanowire transistor modeling: influence of ionized impurity and correlation effects

    • Marc Bescond
    • Changsheng Li
    • Michel Lannoo

    OriginalPaper 05 August 2009 Pages: 382 - 388

15. Comprehensive modeling of optoelectronic nanostructures

    • Bernd Witzigmann
    • Ratko G. Veprek
    • Jan Kupec

    OriginalPaper 10 July 2009 Pages: 389 - 397

16. Modeling of Dye sensitized solar cells using a finite element method

    • Alessio Gagliardi
    • Matthias Auf der Maur
    • Aldo Di Carlo

    OriginalPaper 06 October 2009 Pages: 398 - 409

17. Modeling of circuits and architectures for molecular electronics

    • Paolo Lugli
    • Gyorgy Csaba
    • Christoph Erlen

    OriginalPaper 03 November 2009 Pages: 410 - 426

18. Computational study of carbon-based electronics

    • Mahdi Pourfath
    • Hans Kosina

    OriginalPaper 01 September 2009 Pages: 427 - 440

19. An investigation of performance limits of conventional and tunneling graphene-based transistors

    • R. Grassi
    • A. Gnudi
    • G. Baccarani

    OriginalPaper 26 August 2009 Pages: 441 - 450