1. Scaling dependence of electron transport in nano-scale Schottky barrier MOSFETs

   • Shuichi Toriyama
   • Nobuyuki Sano

   OriginalPaper 22 October 2008 Pages: 471 - 474

2. General 2D Schrödinger-Poisson solver with open boundary conditions for nano-scale CMOS transistors

   • M. Ali Pourghaderi
   • Wim Magnus
   • Marc Heyns

   OriginalPaper 03 September 2008 Pages: 475 - 484

3. A numerical method for a transient quantum drift-diffusion model arising in semiconductor devices

   • Tomoko Shimada
   • Shinji Odanaka

   OriginalPaper 07 September 2008 Pages: 485 - 493

4. Development of electronic device simulations for educational purposes

   • William R. Frensley

   OriginalPaper 16 September 2008 Pages: 494 - 499

5. Atomistic modeling of the electrostatic and transport properties of a simplified nanoscale field effect transistor

   • Li-Na Zhao
   • Xue-Feng Wang
   • Teck-Seng Lee

   OriginalPaper 23 September 2008 Pages: 500 - 508

6. Unified simulation of transport and luminescence in optoelectronic nanostructures

   • Sebastian Steiger
   • Ratko G. Veprek
   • Bernd Witzigmann

   OriginalPaper 01 October 2008 Pages: 509 - 520

7. Reliable k⋅p band structure calculation for nanostructures using finite elements

   • Ratko G. Veprek
   • Sebastian Steiger
   • Bernd Witzigmann

   OriginalPaper 02 October 2008 Pages: 521 - 529