1. Effect of band warping and wafer orientation on NMOS mobility under arbitrary applied stress

   • R. Kotlyar
   • C. Weber
   • M. Stettler

   OriginalPaper 12 December 2007 Pages: 95 - 98

2. A fast \(\vec{k}\cdot\vec{p}\) solver for hole inversion layers with an efficient 2D  \(\vec{k}\) -space discretization

   • Anh-Tuan Pham
   • Bernd Meinerzhagen
   • Christoph Jungemann

   OriginalPaper 12 December 2007 Pages: 99 - 102

3. Anisotropic dopant diffusion in Si under stress using both continuum and atomistic methods

   • I. Martin-Bragado
   • I. Avci
   • M. D. Johnson

   OriginalPaper 22 April 2008 Pages: 103 - 106

4. Surface roughness induced device variability: 3D ab initio Monte Carlo simulation study

   • Craig L. Alexander
   • Asen Asenov

   OriginalPaper 28 February 2008 Pages: 107 - 110

5. Design of random doping fluctuation resistant structures of semiconductor devices

   • Liviu Oniciuc
   • Nadim Haddad
   • Petru Andrei

   OriginalPaper 27 February 2008 Pages: 111 - 114

6. Capacitance fluctuations in bulk MOSFETs due to random discrete dopants

   • Andrew R. Brown
   • Asen Asenov

   OriginalPaper 23 January 2008 Pages: 115 - 118

7. Discontinuous Galerkin solver for Boltzmann-Poisson transients

   • Yingda Cheng
   • Irene M. Gamba
   • Chi-Wang Shu

   OriginalPaper 22 April 2008 Pages: 119 - 123

8. Capacitance variability of short range interconnects

   • Timothy D. Drysdale
   • Andrew R. Brown
   • Asen Asenov

   OriginalPaper 12 December 2007 Pages: 124 - 127

9. Effect of strains on anisotropic material transport in copper interconnect structures under electromigration stress

   • Roberto Lacerda de Orio
   • Hajdin Ceric
   • Siegfried Selberherr

   OriginalPaper 14 February 2008 Pages: 128 - 131

10. Numerical simulation on novel FinFETs: asymmetric poly-silicon gate FinFETs and TiN gate FinFETs

    • Han-Geon Kim
    • Taeyoung Won

    OriginalPaper 21 March 2008 Pages: 132 - 137

11. Temperature dependence on the contact size of GeSbTe films for phase change memories

    • Yiming Li
    • Shao-Ming Yu
    • Yi-Ting Kuo

    OriginalPaper 23 January 2008 Pages: 138 - 141

12. An improved hydrodynamic model describing heat generation and transport in submicron silicon devices

    • O. Muscato
    • V. Di Stefano
    • C. Milazzo

    OriginalPaper 13 May 2008 Pages: 142 - 145

13. Simulation of ZnO diodes for application in non-volatile crossbar memories

    • Michele Pra
    • György Csaba
    • Paolo Lugli

    OriginalPaper 11 January 2008 Pages: 146 - 150

14. Impact-ionization coefficient in silicon at high fields— a parametric approach

    • M. Rudan
    • R. Katilius
    • G. Baccarani

    OriginalPaper 30 January 2008 Pages: 151 - 154

15. Accurate modeling of Metal/HfO₂/Si capacitors

    • Francisco G. Ruiz
    • Andrés Godoy
    • Carlos Sampedro

    OriginalPaper 16 February 2008 Pages: 155 - 158

16. Random dopant related variability in the 30 nm gate length In_0.75Ga_0.25As implant free MOSFET

    • Natalia Seoane
    • A. J. García-Loureiro
    • A. Asenov

    OriginalPaper 28 February 2008 Pages: 159 - 163

17. Electron subband dispersions in ultra-thin silicon films from a two-band k⋅p theory

    • Viktor Sverdlov
    • Hans Kosina
    • Siegfried Selberherr

    OriginalPaper 17 January 2008 Pages: 164 - 167

18. Parameter modeling for higher-order transport models in UTB SOI MOSFETs

    • Martin Vasicek
    • Johann Cervenka
    • Tibor Grasser

    OriginalPaper 08 March 2008 Pages: 168 - 171

19. Simulation of phonon-limited mobility for nano-scale Si-based n-type non-planar device under general orientation and stress condition

    • Kai Xiu

    OriginalPaper 12 December 2007 Pages: 172 - 175

20. Self-consistent calculation for valence subband structure and hole mobility in p-channel inversion layers

    • Yan Zhang
    • Jiseok Kim
    • M. V. Fischetti

    OriginalPaper 12 December 2007 Pages: 176 - 180

21. CMOS performance enhancement in Hybrid Orientation Technologies

    • Tapas Kumar Maiti
    • Satyasopan Mahato
    • Subir Kumar Sarkar

    OriginalPaper 02 April 2008 Pages: 181 - 186

22. Towards the global modeling of InGaAs-based pseudomorphic HEMTs

    • J. S. Ayubi-Moak
    • R. Akis
    • M. Saraniti

    OriginalPaper 15 February 2008 Pages: 187 - 191

23. Monte Carlo simulation of electron mobility in strained Si DG-FETs with TB bandstructure calculation

    • Ximeng Guan
    • Liu Yang
    • Zhiping Yu

    OriginalPaper 01 August 2008 Pages: 192 - 196

24. Monte Carlo simulations of nanometric devices beyond the “mean-field” approximation

    • G. Albareda
    • J. Suñé
    • X. Oriols

    OriginalPaper 06 February 2008 Pages: 197 - 200

25. Tetrahedral elements in self-consistent parallel 3D Monte Carlo simulations of MOSFETs

    • M. Aldegunde
    • A. J. García-Loureiro
    • K. Kalna

    OriginalPaper 27 March 2008 Pages: 201 - 204

26. Monte Carlo simulation of low-field mobility in strained double gate SOI transistors

    • F. Gámiz
    • A. Godoy
    • F. Ruiz

    OriginalPaper 15 December 2007 Pages: 205 - 208

27. Confined phonon scattering in multivalley Monte Carlo simulation of quantum cascade lasers

    • X. Gao
    • D. Botez
    • I. Knezevic

    OriginalPaper 15 January 2008 Pages: 209 - 212

28. Boundary conditions with Pauli exclusion and charge neutrality: application to the Monte Carlo simulation of ballistic nanoscale devices

    • H. López
    • G. Albareda
    • X. Oriols

    OriginalPaper 02 February 2008 Pages: 213 - 216

29. 3D Monte Carlo simulation of current trends and performance in scaled trigate MOSFET

    • Mohamed Mohamed
    • Andrés Godoy
    • Umberto Ravaioli

    OriginalPaper 31 January 2008 Pages: 217 - 221

30. Semi-discrete 2D Wigner-particle approach

    • Mihail Nedjalkov
    • Dragica Vasileska

    OriginalPaper 26 January 2008 Pages: 222 - 225

31. Modeling thermal effects in nano-devices

    • Katerina Raleva
    • Dragica Vasileska
    • Tomislav Dzekov

    OriginalPaper 25 January 2008 Pages: 226 - 230

32. Boundary conditions for Density Gradient corrections in 3D Monte Carlo simulations

    • Craig Riddet
    • Andrew R. Brown
    • Asen Asenov

    OriginalPaper 20 February 2008 Pages: 231 - 235

33. Electrothermal analysis of AlGaN/GaN high electron mobility transistors

    • Sriraaman Sridharan
    • Anusha Venkatachalam
    • P. D. Yoder

    OriginalPaper 20 February 2008 Pages: 236 - 239

34. 3D Monte Carlo analysis of potential fluctuations under high electron concentrations

    • Tadayoshi Uechi
    • Takayuki Fukui
    • Nobuyuki Sano

    OriginalPaper 20 February 2008 Pages: 240 - 243

35. Full band Monte Carlo simulation of dislocation effects on 250 nm AlGaN-GaN HEMT

    • Fabio Vitobello
    • Nicolas Faralli
    • Marco Saraniti

    OriginalPaper 13 February 2008 Pages: 244 - 247

36. A direct solution method for carrier transport using Markov process representation

    • Liu Yang
    • Ximeng Guan
    • Zhiping Yu

    OriginalPaper 26 February 2008 Pages: 248 - 251

37. Monte Carlo simulation of polaron transport in DNA

    • Takayuki Yamanaka
    • Mitra Dutta
    • Michael Stroscio

    OriginalPaper 14 December 2007 Pages: 252 - 255

38. Comparison of calculated and measured I–V curves for DNA

    • Tomoharu Inoue
    • Jun Qian
    • Michael A. Stroscio

    OriginalPaper 15 January 2008 Pages: 256 - 258

39. Transport in open quantum systems: comparing classical and quantum phase space dynamics

    • D. K. Ferry
    • R. Akis
    • J. P. Bird

    OriginalPaper 31 January 2008 Pages: 259 - 262

40. Effects of scattering resonances on carrier-carrier entanglement in charged quantum dots

    • Fabrizio Buscemi
    • Paolo Bordone
    • Andrea Bertoni

    OriginalPaper 12 December 2007 Pages: 263 - 267

41. Effects of phonon scattering on electron transport in double-gate MOSFETs

    • Nobuya Mori
    • Hiroshi Takeda
    • Hideki Minari

    OriginalPaper 29 January 2008 Pages: 268 - 271

42. Effect of magnetic field on shot noise in diffusive conductors and cascaded barriers

    • Massimo Macucci
    • Paolo Marconcini

    OriginalPaper 26 February 2008 Pages: 272 - 275

43. Contact-induced decoherence in nanodevices

    • I. Knezevic

    OriginalPaper 30 January 2008 Pages: 276 - 279

44. Sharpened Aharanov-Bohm oscillations near resonance in a balanced ring with double quantum dots

    • Eric R. Hedin
    • Yong S. Joe
    • Arkady M. Satanin

    OriginalPaper 02 February 2008 Pages: 280 - 283

45. Can silicon FinFETs satisfy ITRS projections for high performance 10 nm devices?

    • H. Khan
    • D. Mamaluy
    • D. Vasileska

    OriginalPaper 26 January 2008 Pages: 284 - 287

46. NEGF simulations of the effect of strain on scaled double gate nanoMOSFETs

    • Karol Kalna
    • Antonio Martinez
    • A. Asenov

    OriginalPaper 23 February 2008 Pages: 288 - 292

47. Atomistic modeling of hole transport in ultra-thin body SOI pMOSFETs

    • Hideki Minari
    • Nobuya Mori

    OriginalPaper 12 December 2007 Pages: 293 - 296

48. Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D

    • M. Naumov
    • S. Lee
    • G. Klimeck

    OriginalPaper 22 February 2008 Pages: 297 - 300

49. Consistency of boundary conditions in nonequilibrium Green’s function simulations

    • Suguru Sato
    • Nobuyuki Sano

    OriginalPaper 16 February 2008 Pages: 301 - 304

50. Calculation of Fin width for bulk inversion in Si FinFET by applying supersymmetry

    • Razib Shishir
    • David Ferry

    OriginalPaper 15 February 2008 Pages: 305 - 308