1. Continuity equation based nonquasi-static charge model for independent double gate MOSFET

   • Neha Sharan
   • Santanu Mahapatra

   OriginalPaper 03 December 2013 Pages: 353 - 359

   

2. Crosstalk analysis of CMOS buffer driven interconnects for ultra-low power applications

   • Rohit Dhiman
   • Rajeevan Chandel

   OriginalPaper 06 December 2013 Pages: 360 - 369

   

3. Unified analytical treatment for the current flow due to tunneling of electrons from metal into semiconductor

   • S. Saygi
   • B. A. Mamedov

   OriginalPaper 04 December 2013 Pages: 370 - 374

   

4. Band structure effect on the electron current oscillation in ultra-scaled GaSb Schottky MOSFET: tight-binding approach

   • Zahra Ahangari
   • Morteza Fathipour

   OriginalPaper 03 December 2013 Pages: 375 - 382

   

5. Spin-orbit interaction in a quantum pseudodot: pressure effect

   • R. Khordad

   OriginalPaper 13 December 2013 Pages: 383 - 393

   

6. Spin transport in monolayer molybdenum disulfide (MoS₂)

   • Bhupesh Bishnoi
   • Bahniman Ghosh

   OriginalPaper 17 December 2013 Pages: 394 - 399

   

7. Improvement of electrical characteristics of local BOX MOSFETs by heavily doped structures and elucidation of the related mechanism

   • Tatsuya Yamada
   • Yoshikata Nakajima
   • Takuo Sugano

   OriginalPaper 24 December 2013 Pages: 400 - 407

   

8. Optical control of large-signal properties of millimeter-wave and sub-millimeter-wave DDR Si IMPATTs

   • Aritra Acharyya
   • Suranjana Banerjee
   • J. P. Banerjee

   OriginalPaper 28 December 2013 Pages: 408 - 424

   

9. A quantitative approach to study solid state phase coarsening in solder alloys using combined phase-field modeling and experimental observation

   • Mohammad Mahdi Tavakoli
   • Rouhollah Tavakoli
   • Hossein Aashuri

   OriginalPaper 20 December 2013 Pages: 425 - 431

   

10. Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory

    • Pengxiao Sun
    • Ling Li
    • Ming Liu

    OriginalPaper 01 January 2014 Pages: 432 - 438

    

11. On the threshold voltage of nanoscale bulk nMOSFETs with [110]/(001) uniaxial stress and quantum effects

    • Guanyu Wang
    • Heming Zhang
    • Zhen Wang

    OriginalPaper 03 January 2014 Pages: 439 - 448

    

12. Performance analysis of fully depleted triple material surrounding gate (TMSG) SOI MOSFET

    • P. Suveetha Dhanaselvam
    • N. B. Balamurugan

    OriginalPaper 10 January 2014 Pages: 449 - 455

    

13. Quasi-bound levels, transmission and resonant tunneling in heterostructures with double and multi rectangular, trapezoidal, triangular barriers

    • F. Nutku

    OriginalPaper 11 February 2014 Pages: 456 - 465

    

14. Erratum to: Quasi-bound levels, transmission and resonant tunneling in heterostructures with double and multi rectangular, trapezoidal, triangular barriers

    • F. Nutku

    Erratum 13 May 2014 Pages: 466 - 466

    

15. Analytical subthreshold current and subthreshold swing models of short-channel dual-metal-gate (DMG) fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs

    • Gopi Krishna Saramekala
    • Abirmoya Santra
    • Pramod Kumar Tiwari

    OriginalPaper 13 February 2014 Pages: 467 - 476

    

16. New capacitance–voltage model for linearly graded junction

    • Assia Boukredimi

    OriginalPaper 19 February 2014 Pages: 477 - 489

    

17. Band-gap properties of 2D photonic crystal made by silica matrix doped with magnetic nanoparticles

    • Ahmed Kahlouche
    • Abdesselam Hocini
    • Djamel Khedrouche

    OriginalPaper 20 February 2014 Pages: 490 - 495

    

18. Effect of unit-cells of the frequency selective surface as superstrate on the directivity of rectangular microstrip antenna

    • Kumud Ranjan Jha
    • G Singh

    OriginalPaper 20 February 2014 Pages: 496 - 502

    

19. An impact of bias and structure dependent L\(_\mathrm{SD}\) variation on the performance of GaN HEMTs based biosensor

    • Niketa Sharma
    • Diksha Joshi
    • Nidhi Chaturvedi

    OriginalPaper 25 February 2014 Pages: 503 - 508

    

20. Simulation study on deep nanoscale short channel junctionless SOI FinFETs with triple-gate or double-gate structures

    • Xi Liu
    • Meile Wu
    • Jong-Ho Lee

    OriginalPaper 22 February 2014 Pages: 509 - 514

    

21. Piezoresistance effect in n-type silicon: from bulk to nanowires

    • S. I. Kozlovskiy
    • N. N. Sharan

    OriginalPaper 27 February 2014 Pages: 515 - 528

    

22. The latency insertion method for simulations of phase-locked loops

    • P. Goh
    • J. E. Schutt-Ainé

    OriginalPaper 25 February 2014 Pages: 529 - 536

    

23. New approaches for modeling and simulation of quantum-dot cellular automata

    • Mohsen Hayati
    • Abbas Rezaei

    OriginalPaper 07 March 2014 Pages: 537 - 546

    

24. Design and analysis of non-uniform shaped RF MEMS switch

    • Vaibhav Kolte
    • P. M. Mahajan

    OriginalPaper 17 April 2014 Pages: 547 - 554

    

25. 1 Tb/s high quality factor NAND gate using quantum-dot semiconductor optical amplifiers in Mach–Zehnder interferometer

    • A. Kotb
    • K. E. Zoiros

    OriginalPaper 04 March 2014 Pages: 555 - 561

    

26. A novel SOI MESFET by \(\uppi \)-shaped gate for improving the driving current

    • Hadi Shahnazarisani
    • Ali A. Orouji
    • Mohammad K. Anvarifard

    OriginalPaper 15 March 2014 Pages: 562 - 568