Modeling of complex oxide materials from the first principles: systematic applications to vanadates RVO3 with distorted perovskite structure Igor Solovyev OriginalPaper 22 January 2011 Pages: 21 - 34
Parity induced edge-current saturation and current distribution in zigzag-edged graphene nano-ribbon devices Satofumi SoumaMatsuto OgawaKazuyuki Watanabe OriginalPaper 16 March 2011 Pages: 35 - 43
Quantum transport of holes in 1D, 2D, and 3D devices: the k⋅p method Mincheol Shin OriginalPaper 09 February 2011 Pages: 44 - 50
Application of the R-matrix method in quantum transport simulations Gennady Mil’nikovNobuya MoriYoshinari Kamakura OriginalPaper 21 January 2011 Pages: 51 - 64
Density-gradient theory: a macroscopic approach to quantum confinement and tunneling in semiconductor devices M. G. Ancona OriginalPaper 23 April 2011 Pages: 65 - 97
Impact of the Coulomb interaction on nano-scale silicon device characteristics Nobuyuki Sano OriginalPaper 16 October 2010 Pages: 98 - 103
Acoustic phonon modulation and electron–phonon interaction in semiconductor slabs and nanowires Shigeyasu UnoJunichi HattoriNobuya Mori OriginalPaper 25 November 2010 Pages: 104 - 120
Unification of MOS compact models with the unified regional modeling approach Xing ZhouGuojun ZhuKhee Yong Lim OriginalPaper 09 March 2011 Pages: 121 - 135
Equivalent-circuit model for electrostatic micro-torsion mirror Kazunori Matsuda OriginalPaper 09 March 2011 Pages: 136 - 140
Characterization of defect density created by stress in the gate to drain overlap region using GIDL current model in n-channel MOSFET N. MaouhoubK. Rais OriginalPaper 14 September 2010 Pages: 141 - 143
Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors W. T. WondmagegnN. T. SatyalaB. E. Gnade OriginalPaper 24 September 2010 Pages: 144 - 153
Study the effect of distribution of density of states on the subthreshold characteristics of an organic field-effect transistor (OFET) Arash TakshiJohn D. Madden OriginalPaper 07 October 2010 Pages: 154 - 162
Self-heating in a coupled thermo-electric circuit-device model Markus BrunkAnsgar Jüngel OriginalPaper 17 October 2010 Pages: 163 - 178
A two-dimensional analytical subthreshold behavior analysis including hot-carrier effect for nanoscale Gate Stack Gate All Around (GASGAA) MOSFETs M. A. AbdiF. DjeffalD. Arar OriginalPaper 19 October 2010 Pages: 179 - 185
Analysis of narrow terahertz microstrip transmission-line on multilayered substrate Kumud Ranjan JhaG. Singh OriginalPaper 27 October 2010 Pages: 186 - 194
Theoretical computation of input impedance of gap-coupled circular microstrip patch antennas loaded with shorting post Pradeep KumarG. Singh OriginalPaper 10 November 2010 Pages: 195 - 200
Compact modeling and simulation of nanoscale fully depleted DG-SOI MOSFETS Rajeev SharmaSujata PandeyShail Bala Jain OriginalPaper 23 February 2011 Pages: 201 - 209
Subthreshold behavior optimization of nanoscale Graded Channel Gate Stack Double Gate (GCGSDG) MOSFET using multi-objective genetic algorithms T. BendibF. DjeffalD. Arar OriginalPaper 20 February 2011 Pages: 210 - 215
Quantum ballistic transport in the junctionless nanowire pinch-off field effect transistor Dries SelsBart SoréeGuido Groeseneken OriginalPaper 23 February 2011 Pages: 216 - 221
Gate leakage behavior of source/drain-to-gate non-overlapped MOSFET structure Ashwani K. RanaNarottam ChandVinod Kapoor OriginalPaper 08 April 2011 Pages: 222 - 228
Analysis of double-gate CMOS for double-pole four-throw RF switch design at 45-nm technology Viranjay M. SrivastavaK. S. YadavG. Singh OriginalPaper 19 April 2011 Pages: 229 - 240
Inductance modelling of SWCNT bundle interconnects using partial element equivalent circuit method Sudhanshu ChoudharyS. Qureshi OriginalPaper 03 May 2011 Pages: 241 - 247
Hybrid numerical analysis of a high-speed non-volatile suspended gate silicon nanodot memory (SGSNM) Mario A. García-RamírezYoshishige TsuchiyaHiroshi Mizuta OriginalPaper 05 May 2011 Pages: 248 - 257
Piezoresistive effect in p-type silicon classical nanowires at high uniaxial strains S. I. KozlovskiyN. N. Sharan OriginalPaper 06 May 2011 Pages: 258 - 267
Erratum to: Application of the R-matrix method in quantum transport simulations Gennady Mil’nikovNobuya MoriYoshinari Kamakura Erratum 12 May 2011 Pages: 268 - 268
Erratum to: Parity induced edge-current saturation and current distribution in zigzag-edged graphene nano-ribbon devices Satofumi SoumaMatsuto OgawaKazuyuki Watanabe Erratum 22 April 2011 Pages: 269 - 269
