1. Growth stability of silicon whiskers

   • V. A. Nebol’sin
   • A. A. Shchetinin
   • E. I. Natarova

   OriginalPaper Pages: 419 - 421

2. Effect of ion irradiation on the depth profiles of microdefects in silicon

   • E. S. Demidov
   • N. D. Latysheva
   • V. D. Skupov

   OriginalPaper Pages: 422 - 425

3. Copper-related deep acceptor in heat-treated Ge_1-xSi_x single crystals

   • P. G. Azhdarov

   OriginalPaper Pages: 426 - 428

4. Interaction between thin indium films and single-crystal ZnAs₂ substrates

   • S. F. Marenkin
   • V. P. Dubkov
   • V. A. Popov

   OriginalPaper Pages: 429 - 430

5. High-pressure synthesis of metastable ternary solid solutions between tetrahedral semiconductors

   • A. G. Lyapin
   • S. V. Popova
   • N. V. Kalyaeva

   OriginalPaper Pages: 431 - 436

6. Synthesis and X-ray diffraction study of CuCr_1-xV_xS₂

   • R. F. Al’mukhametov
   • R. A. Yakshibaev
   • A. R. Abdullin

   OriginalPaper Pages: 437 - 440

7. X-ray diffraction study of Cu_1.8Zn_0.2Se

   • Yu. G. Asadov
   • K. M. Dzhafarov
   • S. Yu. Asadova

   OriginalPaper Pages: 441 - 443

8. Effect of pulsed laser irradiation on the photoconductivity of polycrystalline CdTe films

   • A. Baidullaeva
   • A. I. Vlasenko
   • A. V. Ponedilok

   OriginalPaper Pages: 444 - 448

9. Electrical properties of thin PbTe films on Si substrates

   • Ya. A. Ugai
   • A. M. Samoilov
   • O. B. Yatsenko

   OriginalPaper Pages: 449 - 453

10. Chemical vapor deposition of refractory metals from fluoride gases

    • Yu. V. Lakhotkin
    • V. P. Kuz’min
    • A. B. Kovalev

    OriginalPaper Pages: 454 - 457

11. Kinetics of aluminum hydride thermal decomposition

    • Yu. M. Dergachev
    • I. G. Gorichev
    • N. T. Kuznetsov

    OriginalPaper Pages: 458 - 461

12. Kinetics and mechanism of reaction between silicon carbide and silica

    • M. S. Khrushchev

    OriginalPaper Pages: 462 - 464

13. Thermodynamic stability of the GaN-InN-AlN system

    • E. N. Vigdorovich
    • Yu. N. Sveshnikov

    OriginalPaper Pages: 465 - 467

14. Nonstoichiometry and incongruent melting of Y-123

    • G. D. Nipan
    • T. N. Kol’tsova

    OriginalPaper Pages: 468 - 473

15. High-temperature equilibrium between YBa₂Cu_3-xCo_xO_6+δ solid solutions and oxygen

    • M. V. Patrakeev
    • E. B. Mitberg
    • V. I. Voronin

    OriginalPaper Pages: 474 - 478

16. Influence ofF centers on the optical and adsorptive properties of doped ZrO₂ crystals

    • V. V. Sal’nikov

    OriginalPaper Pages: 479 - 483

17. MVO₄-Ta₂O₅-Nb₂O₅ (M = Y, La) solid solutions

    • L. A. Perelyaeva
    • L. V. Zolotukhina
    • E. V. Arkhipova

    OriginalPaper Pages: 484 - 488

18. Effects of nonstoichiometry and doping on the curie temperature and defect structure of lithium niobate

    • M. N. Palatnikov
    • N. V. Sidorov
    • V. T. Kalinnikov

    OriginalPaper Pages: 489 - 493

19. Liquidus relations in the Li₂WO₄-Na₂WO₄-CaWO₄ system

    • A. M. Gasanaliev
    • B. Yu. Gamataeva

    OriginalPaper Pages: 494 - 495

20. Anharmonic vibrations and grüneisen parameter of the quasi-lattice of glassy arsenic chalcogenides in the free-volume approach

    • T. N. Mel’nichenko

    OriginalPaper Pages: 496 - 501

21. Electronic density of states at the interface between silicon and lead borosilicate glass

    • S. I. Vlasov
    • P. B. Parchinskii
    • B. A. Olmatov

    OriginalPaper Pages: 502 - 503

22. Effect of grain-boundary stabilization on the strength, thermal conductivity, and dielectric properties of aluminum nitride

    • S. N. Ivanov
    • L. M. Zhukova
    • A. V. Taranov

    OriginalPaper Pages: 504 - 507

23. Structural changes in phosphorus-ion-implanted silicon

    • Z. T. Kuznicki
    • R. Tsyakh
    • D. V. Kadel’nik

    Reports Presented at the Second International Conference on the Physical Problems of Semiconductor Materials Research, Chernovtsy, Ukraine, September 8–12, 1997 Pages: 508 - 510

24. TlIn_1-xYb_xS₂ solid solutions

    • M. M. Zarbaliev

    Reports Presented at the Second International Conference on the Physical Problems of Semiconductor Materials Research, Chernovtsy, Ukraine, September 8–12, 1997 Pages: 511 - 514

25. Photo- and roentgenoluminescence of ZnSe

    • V. Ya. Degoda
    • B. R. Kiyak
    • A. I. Proskura

    Reports Presented at the Second International Conference on the Physical Problems of Semiconductor Materials Research, Chernovtsy, Ukraine, September 8–12, 1997 Pages: 515 - 517

26. Physical properties of cadmium selenide layers produced by solid-state substitution reactions

    • Makhnii
    • E. V. Makhnii
    • I. M. Fodchuk

    Reports Presented at the Second International Conference on the Physical Problems of Semiconductor Materials Research, Chernovtsy, Ukraine, September 8–12, 1997 Pages: 518 - 519

27. Electrical and optical properties of Hg_1-x-y Zn _x Mn _y Te crystals

    • V. M. Frasunyak

    Reports Presented at the Second International Conference on the Physical Problems of Semiconductor Materials Research, Chernovtsy, Ukraine, September 8–12, 1997 Pages: 520 - 523

28. Mixed-valent states of rare-earth dopants in IV-VI semiconductors

    • V. K. Dugaev

    Reports Presented at the Second International Conference on the Physical Problems of Semiconductor Materials Research, Chernovtsy, Ukraine, September 8–12, 1997 Pages: 524 - 526

29. Effect of interfacial reactions on the photoelectric performance of In/CdTe/ITO and CrO_xCdTe/ITO heterostructures

    • B. T. Boiko
    • G. I. Kopach
    • G. S. Khripunov

    Reports Presented at the Second International Conference on the Physical Problems of Semiconductor Materials Research, Chernovtsy, Ukraine, September 8–12, 1997 Pages: 527 - 528