1. Preface

   • K Nitsch
   • P. Demo

   EditorialNotes Pages: 677 - 677

2. Transient binary nucleation from ethanol-hexanol vapour

   • Z. Kožíšek
   • P. Demo

   OriginalPaper Pages: 679 - 684

3. Effect of holmium addition during LPE growth on the properties of InP and GaInAsP layers

   • O. Procházková
   • J. Zavadil
   • J. Novotný

   OriginalPaper Pages: 685 - 691

4. More progressive technology of GaSb single crystal growth

   • B. Štěpánek
   • V. Šestáková
   • J. Šesták

   OriginalPaper Pages: 693 - 697

5. Lpe growth method possibilities in A3B5 semiconductors preparation

   • D. Nohavica

   OriginalPaper Pages: 699 - 705

6. CVD diamond films for electronics

   • J. Rosa
   • M. Vaněček
   • M. Nesladek

   OriginalPaper Pages: 707 - 716

7. Lead tungstate single crystal scintillators

   • K. Nitsch
   • M. Nikl
   • R. Uecker

   OriginalPaper Pages: 717 - 724

8. A contribution to the characterization of laser-hardened steel surfaces

   • I. Kraus
   • N. Ganev
   • G. Gosmanová

   OriginalPaper Pages: 725 - 730

9. Influence of crystallization process on Ni₃Al properties

   • M. Kursa
   • J. Drápala
   • L. Hyspecká

   OriginalPaper Pages: 731 - 738

10. Ni-Al intermetallic alloy at the thermocycling conditions

    • P. Klč
    • T. Pelachová

    OriginalPaper Pages: 739 - 745