Photoluminescence studies of InGaAsP double heterojunctions D. Z. Garbuzov OriginalPaper Pages: 365 - 373
Nonradiative multiphonon capture of thermal and hot carriers by deep traps in semiconductors for the alternative regimes of small and large lattice relaxation R. Pässler OriginalPaper Pages: 377 - 401
High-excitation phenomena in doped III–V semiconductors R. SchwabeI. StreitK. Unger OriginalPaper Pages: 402 - 402
Properties and nature of the main electron trap in GaAs T. FigielskiT. Wosiński OriginalPaper Pages: 403 - 408
Technological and physical aspects of the main EL2 defect in GaAs M. KaminśkaM. SkowrońskiH. C. Gatos OriginalPaper Pages: 409 - 414
Thermochemistry applied to deep-level defects in III–V compounds P. Krispin OriginalPaper Pages: 428 - 435
Research on AIIIBV materials for optoelectronics in the Institute of Physics and Technology of Materials I. B. Petrescu-Prahova OriginalPaper Pages: 447 - 456
Semiconductor heterostructure lasers with distributed feedback E. L. Portnoi OriginalPaper Pages: 469 - 478
Technology of the (Al,Ga)As/GaAs double heterostructure lasers J. NovotnýI. HüttelF. Šrobár OriginalPaper Pages: 485 - 492
Publication and citation patterns in a specialty of physics “radiative recombination and related phenomena in III–V compound semiconductors” Jan Vlachý Letter to the Editor Pages: 495 - 498