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Ideality factor of GaN-based light-emitting diodes determined by the measurement of photovoltaic characteristics

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Abstract

We present a method for determining the ideality factor of GaN-based light-emitting diodes (LEDs) by using the measured photovoltaic characteristics. The relation between the short-circuit current and the open-circuit voltage is obtained as the incident power of a laser diode emitting at 405 nm is varied, which is used to determine the ideality factor of the LED. From the photovoltaic measurements, the ideality factors of a blue and a green LED are determined to be 1.16 and 1.78, respectively. The ideality factors obtained by using the photovoltaic measurement are found to be much smaller than those obtained by using the I–V curve without illumination, which is believed to result from the different carrier generation and transport mechanisms. Investigating the photovoltaic characteristics of GaN-based LEDs is expected to provide insight into the origin of the high diode ideality factor in GaN-based devices.

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Authors and Affiliations

  1. Department of Physics, Inha University, Incheon, 402-751, Korea

    Hyun-Joong Kim, Geun-Hwan Ryu, Won-Bo Yang & Han-Youl Ryu

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  1. Hyun-Joong Kim
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  2. Geun-Hwan Ryu
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  3. Won-Bo Yang
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Correspondence to Han-Youl Ryu.

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Kim, HJ., Ryu, GH., Yang, WB. et al. Ideality factor of GaN-based light-emitting diodes determined by the measurement of photovoltaic characteristics. Journal of the Korean Physical Society 65, 1639–1643 (2014). https://doi.org/10.3938/jkps.65.1639

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