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Charge transfer reactions on semiconductor surfaces

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Festkörperprobleme 20

Part of the book series: Advances in Solid State Physics ((ASSP,volume 20))

Abstract

A survey is given of semiconductor electronic structures which are related to surface atom geometric structures (“relaxation”) and/or adsorption properties of foreign particles. Results obtained on two characteristic “model surfaces”, Si (111) and \(ZnO (10\bar 10)\), are discussed. Examples are given for kinetically controlled charge transfer reactions during irreversible formation of interfaces and for reversible charge transfer reactions during physiorption, chemisorption and formation of point defects at the surface.

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  1. Institut für Physikalische Chemie der Universität Hannover, Hannover, Germany

    Wolfgang Göpel

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Göpel, W. (1979). Charge transfer reactions on semiconductor surfaces. In: Treusch, J. (eds) Festkörperprobleme 20. Advances in Solid State Physics, vol 20. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0116743

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