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Nonvolatile Field-Effect Transistors Using Ferroelectric-Doped HfO2 Films

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Ferroelectric-Gate Field Effect Transistor Memories

Part of the book series: Topics in Applied Physics ((TAP,volume 131))

Abstract

The discovery of ferroelectricity in hafnium oxide (HfO2) thin films renewed the interest in ferroelectric nonvolatile memories. In particular, not only ferroelectric capacitors but also ferroelectric field-effect transistor based on this material have now become appealing concepts. This is mainly due to robust ferroelectric properties even upon aggressive scaling and to the compatibility with common fabrication processes used in the semiconductor industry. In this chapter, we review the key achievements of HfO2-based FeFETs since their first report in 2012. First, material properties of HfO2 for memory applications are briefly summarized, discussing the impact of doping as well as the electrical switching and reliability characteristics. Then, FeFETs having a 10-nm-thick silicon-doped HfO2 layer in the gate stack are illustrated, and their main figures of merit are discussed, including memory window, write and read operations, endurance and retention aspects as well as parasitic charge trapping. Finally, the integration in advanced technology nodes and the performance of large active memory arrays is shown.

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Acknowledgements

The authors like to thank the FeFET team at Qimonda, Fraunhofer IPMS-CNT, GlobalFoundries, RWTH Aachen, Munich University of Applied Science, and NaMLab for their contribution to the results. This work was supported in part by the EFRE fund of the European Commission and in part by the Free State of Saxony, Germany.

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Authors and Affiliations

  1. Nanoelectronic Materials Laboratory—NaMLab gGmbH, Noethnitzer Strasse 64a, 01187, Dresden, Germany

    Uwe Schroeder, Stefan Slesazeck, Halid Mulaosmanovic & Thomas Mikolajick

  2. IHM, Technische Universität Dresden, Noethnitzer Strasse 64, 01187, Dresden, Germany

    Thomas Mikolajick

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  1. Uwe Schroeder
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  2. Stefan Slesazeck
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  3. Halid Mulaosmanovic
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  4. Thomas Mikolajick
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Correspondence to Uwe Schroeder .

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Editors and Affiliations

  1. School of Electrical and Computer Engineering, University of Seoul, Seoul, Korea (Republic of)

    Byung-Eun Park

  2. Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama, Japan

    Hiroshi Ishiwara

  3. Graduate School of Engineering Science, Osaka University, Osaka, Japan

    Masanori Okuyama

  4. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan

    Shigeki Sakai

  5. Advanced Materials Engineering for Information and Electronics, Kyunghee University, Yongin, Korea (Republic of)

    Sung-Min Yoon

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Schroeder, U., Slesazeck, S., Mulaosmanovic, H., Mikolajick, T. (2020). Nonvolatile Field-Effect Transistors Using Ferroelectric-Doped HfO2 Films. In: Park, BE., Ishiwara, H., Okuyama, M., Sakai, S., Yoon, SM. (eds) Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131. Springer, Singapore. https://doi.org/10.1007/978-981-15-1212-4_4

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