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Nonvolatile Ferroelectric Memory Thin-Film Transistors Using a Poly(Vinylidene Fluoride Trifluoroethylene) Gate Insulator and an Oxide Semiconductor Active Channel

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Ferroelectric-Gate Field Effect Transistor Memories

Part of the book series: Topics in Applied Physics ((TAP,volume 131))

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Abstract

Nonvolatile memory thin-film transistor using an organic ferroelectric gate insulator and oxide semiconductor active channel is proposed as a promising memory element embedded onto the next-generation flexible and transparent electronic systems. In this chapter, some important technical issues for this device, such as device structure, process optimization, and memory array integration, are extensively discussed. Feasible applications and remaining technological issues to be solved for practical applications are also reviewed.

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Authors and Affiliations

  1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin, Gyeonggi-do, 446-701, South Korea

    Sung-Min Yoon

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  1. Sung-Min Yoon
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Correspondence to Sung-Min Yoon .

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Editors and Affiliations

  1. School of Electrical and Computer Engineering, University of Seoul, Seoul, Korea (Republic of)

    Byung-Eun Park

  2. Frontier Collaborative Research Center, Tokyo Institute of Technology, Yokohama, Japan

    Hiroshi Ishiwara

  3. Graduate School of Engineering Science, Osaka University, Osaka, Japan

    Masanori Okuyama

  4. National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan

    Shigeki Sakai

  5. Advanced Materials Engineering for Information and Electronics, Kyunghee University, Yongin, Korea (Republic of)

    Sung-Min Yoon

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Yoon, SM. (2020). Nonvolatile Ferroelectric Memory Thin-Film Transistors Using a Poly(Vinylidene Fluoride Trifluoroethylene) Gate Insulator and an Oxide Semiconductor Active Channel. In: Park, BE., Ishiwara, H., Okuyama, M., Sakai, S., Yoon, SM. (eds) Ferroelectric-Gate Field Effect Transistor Memories. Topics in Applied Physics, vol 131. Springer, Singapore. https://doi.org/10.1007/978-981-15-1212-4_12

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