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Design and Modeling of Micro-relay

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Micro-Relay Technology for Energy-Efficient Integrated Circuits

Part of the book series: Microsystems and Nanosystems ((MICRONANO,volume 1))

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Abstract

This chapter begins with a detailed analysis on the design and modeling varies micro-relays. Analytical formulations for the switching voltages, spring design and modeling, and the dynamic behavior of micro-relays are established. These delay and energy models are then used for relay energy-delay optimization and scaling in Chap. 5.

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Notes

  1. 1.

    The second solution to the force-balance equation is a mono-stable position (marked by the square symbol in Fig. 2.3). This is because, at such position, a small increase in the displacement will result in the electrostatic force to be greater than the spring force, causing the gap to close abruptly. Similarly, a small reduction in the displacement will result in the spring force to dominate, which will force the mechanical structure to move to the stable position (as marked by the circle symbol).

  2. 2.

    To evaluate the integral \( {\displaystyle \underset{0}{\overset{x}{\int }}}{\left\langle x-{x}_0\right\rangle}^ndx \), we note that \( {\displaystyle \underset{0}{\overset{x}{\int }}}{\left\langle x-{x}_0\right\rangle}^ndx\equiv {\displaystyle \underset{0}{\overset{x}{\int }}}{\left(x-{x}_0\right)}^nu\left(x-{x}_o\right)dx \);

    For x < xo, \( {\displaystyle \underset{0}{\overset{x}{\int }}}{\left(x-{x}_0\right)}^nu\left(x-{x}_o\right)dx=0 \);

    For x ≥ xo, \( {\displaystyle \underset{0}{\overset{x}{\int }}}{\left(x-{x}_0\right)}^nu\left(x-{x}_o\right)dx={\displaystyle \underset{x_o}{\overset{x}{\int }}}{\left(x-{x}_0\right)}^ndx=\frac{1}{n+1}{\left(x-{x}_0\right)}^{n+1} \)

    Therefore \( {\displaystyle \underset{0}{\overset{x}{\int }}}{\left(x-{x}_0\right)}^nu\left(x-{x}_o\right)dx=\frac{1}{n+1}{\left(\mathrm{x}-{x}_0\right)}^{n+1}u\left(x-{x}_o\right)=\frac{1}{n+1}{\left\langle x-{x}_0\right\rangle}^{n+1} \)

  3. 3.

    Note that the capacitance associated with the wires used to interconnect a relay-based circuit would likely scale with \( \sqrt{A} \) rather than A. Furthermore, parasitic interconnect capacitance would likely to increase with beam length L. However, using the linear dependence on A greatly simplifies the calculations, and the overall findings are relatively unaffected by these simplifications.

References

  1. S.P. Timoshenko, J.M. Gere, Mechanics of Materials (Brooks/Cole, Pacific Grove, 2001)

    Google Scholar 

  2. W.N. Sharpe Jr., K.M. Jackson, K.J. Hemker, Z. Xie, Effect of specimen size on Young’s modulus and fracture strength of polysilicon. J. Microelectromech. Syst. 10(3), 317–326 (2001)

    Article  Google Scholar 

  3. M. Biebl, H. von Philipsborn. Fracture strength of doped and undoped polysilicon, in Solid-State Sensors and Actuators, 1995 and Eurosensors IX. Transducers’ 95. The 8th International Conference on, vol. 2, pp. 72–75. IEEE, 1995.

    Google Scholar 

  4. H. Kam, V. Pott, R. Nathanael, J. Jeon, E. Alon, T.-J. King Liu. Design and reliability of a micro-relay technology for zero-standby-power digital logic applications, in Electron Devices Meeting (IEDM), 2009 I.E. International, pp. 1–4. IEEE, 2009.

    Google Scholar 

  5. R. Sattler, F. Plötz, G. Fattinger, G. Wachutka, Modeling of an electrostatic torsional actuator: demonstrated with an RF MEMS switch. Sens. Actuators A. Phys. 97–98, 337–346 (2002)

    Article  Google Scholar 

  6. W.C. Young, R.G. Budynas, Roark’s Formulas for Stress and Strain, vol. 6 (McGraw-Hill, New York, NY, 2002)

    Google Scholar 

  7. J. Jeon, V. Pott, H. Kam, R. Nathanael, E. Alon, T.J. King Liu, Perfectly complementary relay design for digital logic applications. IEEE Elect. Dev. Lett. 31, 371–373 (2010)

    Article  Google Scholar 

  8. R. Holm, E. Holm, Electric Contacts; Theory and Application, 4th edn. (Springer, Berlin, 1967)

    Book  Google Scholar 

  9. Y.V. Sharvin, Sharvin Resistance Formula. Sov. Phys. JETP. 21, pp. 655 (1965)

    Google Scholar 

  10. B. Nikolic, P.B. Allen, Electron transport through a circular constriction. Phys. Rev. B 60(6), 3963–3969 (1999)

    Article  Google Scholar 

  11. G.M. Rebeiz, RF MEMS Theory, Design and Technology (Wiley, Hoboken NJ, 2003)

    Google Scholar 

  12. R.A. Johnson, Mechanical Filters in Electronics (Wiley, New York, NY, 1983)

    Google Scholar 

  13. K.Y. Yasumura, T.D. Stowe, E.M. Chow, T. Pfafman, T.W. Kenny, B.C. Stipe, D. Rugar, Quality factors in micro- and submicron-thick cantilevers. J. Microelectromech. Syst. 9, 117–125 (2000)

    Article  Google Scholar 

  14. D.W. Carr, S. Evoy, L. Sekaric, H.G. Craighead, J.M. Parpia, Measurement of mechanical resonance and losses in nanometer scale silicon wires. Appl. Phys. Lett. 75, 920–922 (1999)

    Article  Google Scholar 

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Appendix: Spring Constant of a Pinned-Pinned Beam

Appendix: Spring Constant of a Pinned-Pinned Beam

To calculate the spring constant of a pinned-pinned beam, we first take advantage of the symmetry (as depicted in Fig. 2.26) to obtain the reaction force at the pinned-end to be F/2:

Fig. 2.26
figure 26

Deflection of a pinned-pinned beam

$$ {R}_A=F/2 $$
(2.97)

For a load uniformly distributed throughout the span of the beam, the bending moment at x can be expressed by

$$ M(x)={M}_A+{R}_Ax-\frac{1}{2}q{x}^2 $$
(2.98)

At the pinned end, bending moment is zero; therefore Eq. (2.98) becomes

$$ M(x)=\frac{F}{2}x-\frac{1}{2}q{x}^2 $$
(2.99)

Substituting Eq. (2.99) into the beam equation, we obtain

$$ \frac{E}{1-{\upsilon}^2}I\frac{d^2z}{d{x}^2}=-\frac{F}{2}x+\frac{1}{2}q{x}^2 $$
(2.100)

where E/(1 − v2) is used instead of Young Modulus E to account for the plate effect. Integrating both sides by x, the slope of the beam can be obtained:

$$ \frac{E}{1-{\upsilon}^2}I\frac{dz}{dx}=-\frac{F}{4}{x}^2+\frac{1}{6}q{x}^3+{C}_1 $$
(2.101)

By symmetry, \( {\left.\frac{dz}{dx}\right|}_{x=L/2}=0 \); therefore

$$ {C}_1=\frac{1}{24}F{L}^2 $$
(2.102)

And the beam deflection is

$$ \frac{E}{1-{\upsilon}^2}Iz(x)=-\frac{F}{12}{x}^3+\frac{1}{24}q{x}^4+\frac{1}{24}F{L}^2x $$
(2.103)

Hence, the maximum beam deflection at x = L/2 is

$$ \frac{E}{1-{\upsilon}^2}I{z}_{max}=\frac{5}{384}F{L}^3 $$
(2.104)

Finally, the spring constant can readily be obtained:

$$ k=\frac{384}{5}\frac{E}{1-{\upsilon}^2}\frac{I}{L^3} $$
(2.105)

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Kam, H., Chen, F. (2015). Design and Modeling of Micro-relay. In: Micro-Relay Technology for Energy-Efficient Integrated Circuits. Microsystems and Nanosystems, vol 1. Springer, New York, NY. https://doi.org/10.1007/978-1-4939-2128-7_2

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  • DOI: https://doi.org/10.1007/978-1-4939-2128-7_2

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