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References
Boesen GF, Jacobs, JE (1968) ZnO field-effect transistor. Proc IEEE 56:2094–2095
Khuri-Yakub BT, Kino GS (1974) A monolithic zinc-oxide-on-silicon convolver. Appl Phys Lett 25:188–190
Mahan, GD (1983) Intrinsic defects in ZnO varistors. J Appl Phys 54:3825–3832
Kudo A, Yanagi H, Ueda K, Hosono H, Kawazoe H, Yano Y (1999) Fabrication of transparent p–n heterojunction thin-film diodes based entirely on oxide semiconductors. Appl Phys Lett 75:2851–2853
Chopra K, Major S, Pandya D (1983) Transparent conductors – a status review. Thin Solid Films 102:1–46
Prins MWJ, Grosse-Holz K, Mller G, Cillessen JM, Giesbers JB (1996) A ferroelectric transparent thin-film transistor. Appl Phys Lett 68:3650–3652
Kawasaki M, Tamura K, Saikusa K, Aita T, Tsukazaki A, Ohtomo A, Jin ZG, Matsumoto Y, Fukumura T, Koinuma H, Ohrnaki Y, Kishimoto S, Ohno Y, Matsukura F, Ohno H, Makino T, Tuan NT, Sun PD, Chia CH, Segawa Y, Tang ZK, Wang GKL (2000) Can ZnO eat market in optoelectronic applications. Ext. Abst. 2000 Int Conf. Solid State Deyices ard Materials, Sendai, l28–129
Ohtomo A, Kawaski M (2000) Novel semiconductor technologies of ZnO films towards ultraviolet LEDs and invisible FETs. IEEE Trans Electron E83-C:1614–1617
Ohya Y, Niwa T, Ban T, Takahashi Y (2001) Thin-film transistor of ZnO fabricated by chemical solution deposition. Jpn J Appl Phys 40:297–299
Hoffman R (2002) Development, fabrication, and characterization of transparent electronic devices. Masters Thesis, Oregon State University
Masuda S, Kitamura K, Okumura Y, Miyatake S, Tabata H, Kawai T (2003) Transparent thin-film transistors using ZnO as an active channel layer and their electrical properties. J Appl Phys 93:1624–1630
Nomura K, Ohta H, Ueda K, Kamiya T, Hirano M, Hosono H (2003) Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor. Science 300:1269–1272
Hoffman R, Norris B, Wager J (2003) ZnO-based transparent thin-film transistors. Appl Phys Lett 82:733–735
Nishii J, Hossain FM, Takagi S, Aita T, Saik K, Ohmaki Y, Ohkubo I, Kishimoto S, Ohtomo A, Fukumura T, Matsukura F, Ohno Y, Koinuma H, Ohno H, Kawasaki M (2003) High mobility thin film transistors with transparent ZnO channels. Jpn J Appl Phys 42:L 347–349 Part 2, No. 4A
Carcia PF, McLean RS, Reilly MH, Malajovich I, Sharp KG, Agrawal S, Nunes G Jr (2003) ZnO thin film transistors for flexible electronics. Mat Res Soc Symp Proc 769:H7.2.1
Nishii J, Hossain FM, Takagi S, Aita T, Saikusa K, Ohmaki Y, Kishimoto I, Ohtomo A, Fukumura T, Matsukura F, OhnoY, Koinuma H, Ohno H, Kawasaki M (2003) High mobility thin film transistors with transparent ZnO channels. Jpn J Appl Phys 42:347–349
Fortunato E, Hosano H, Granquist C, Wager J (2007) Advances in transparent electronics: From Materials to devices, I, 51(7).
Chaing HQ (2003) Development of zinc tin oxide-based transparent thin-film transistors. Master Thesis, Oregon State University
Chiang HP, Wager JF, Hoffman, RL, Jeong J, Keszler DA (2005) High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Appl Phys Lett 86: 13503–13505
Carcia PF, McLean RS, Reilly MH, Nunes G (2003) Transparent ZnO thinfilm transistor fabricated by rf magnetron sputtering. Appl Phys Lett 82:1117–1119
Fortunato E, Pimentel A, Pereira L, Goncalves A, Lavareda G, Aguas H, Ferreira I, Carvalho CN, Martins R (2004) High field-effect mobility zinc oxide thin film transistors produced at room temperature. J Non-Cryst Solids 338–340:806–809
Carcia PF, McLean RS, Reilly MH (2005) Oxide engineering of ZnO thin-film transistors for flexible electronics. J Soc Inf Display 13/7:547–550
Bellingeria E, Marréa D, Pellegrinoa L, Pallecchia I, Canub G, Vignoloa M, Berninia C, Siria HS (2005) High mobility ZnO thin film deposition on SrTiO3 and transparent field effect transistor fabrication Superlattices and Microstructures 38:446–454
Hwang CS, Park SH, Chu HY (2005) ZnO TFT fabricated at low temperature for application active-matrix display. 12th Int. Display Workshops/Asia Display, p1149–1151
Carcia PF, McLean RS, Reilly MH (2006) High-performance ZnO thin-film transistors on gate dielectrics grown by atomic layer deposition. Appl Phys Lett 88:123509–123511
Jackson WB, Hoffman RL, Herman GS (2005) High-performance flexible zinc tin oxide field-effect transistors. Appl Phys Lett 87:193503–193505
Hoffman RL (2006) Effects of channel stoichiometry and processing temperature on the electrical characteristics of zinc tin oxide thin-film transistors. Solid-State Electron 50:784–787
Jackson WB, Herman GS, Hoffman RL, Taussig C, Braymen S, Jeffery F, Hauschildt J (2006) Zinc tin oxide transistors on flexible substrates. J Non-Cryst Solids 352:1753–1755
Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H (2004) Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432:488–492
Yaglioglu B, Yeom HY, Beresford R, Paine DC (2006) A high-mobility amorphous In2O3 – 10 wt% ZnO thin film transistors. Appl Phys Lett 89:062103–062105
Fortunato E, Barquinha P, Pimentel A, Gonçalves A, Marques A, Pereira L, Martins R (2005) Fully transparent ZnO thin-film transistor produced at room temperature. Adv Mat 17: 590–594
Santato C, Manunza I, Bonfiglio A, Ciroira F, Cosseddu P, Zamboni R, Muccini M (2006) Tetracene light-emitting transistors on flexible plastic substrates. Appl Phys Lett 86: 141106–141109
Loi A, Manunza I, Bonfiglio A (2005) Flexible, organic, ion-sensitive field-effect transistor. Appl Phys Lett 86:103512–103514
Bonfiglio A, Mameli F, Sanna O (2003) A completely flexible organic transistor obtained by a one-mask photolithographic process. Appl Phys Lett 82(20):3550–3552
Ohta H, Nomura K, Hiramatsu H, Ueda K, Kamiya T, Hirano M, Hosono H (2003) Frontier of transparent oxide semiconductors. Solid-State Electron 47:2261–2267
Fortunato EC, Barquinha PM, Pimentel AC, Gonçalves AM, Marques AJ, Martins RF, Pereira LM (2004) Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature. Appl Phys Lett 85:2541–2543
Hosono H, Nomura H, Kamiya T (2005) High performance FET using transparent amorphous oxide semiconductors as channel layer on plastic substrate. 12th Int. Display Workshops/Asia Display IDW/AD05 AMD3-1:251–253
Ellmer K (2001) Resitivity of polycrystalline zinc oxide films: Current status and physical limit. J Phys D: Appl Phys 34:3097–3108
Chopra K, Major S, Pandya D (1983) Transparent conductors – a status review. Thin Solid Films 102:1–46
Minami T, Miyata T, Yamamoto T (1998) Work function of transparent conducting multicomponent oxide thin films prepared by magnetron sputtering. Surf Coat Tech 108–109: 583–587
Minami T, Takata S, Sato H, Sonhana H (1995) Properties of transparent zinc stannate conducting films prepared by radio frequency magnetron sputtering. J Vac Sci Technol A 13:1095–1099
Minami T, Sonohara H, Takata S, Sato H (1994) Highly transparent and conductive zinc-stannate thin films prepared by RF magnetron sputtering. Jpn J Appl Phys 33:1693–1696
Wu X, Coutts T, Mulligan W (1997) Properties of transparent conducting oxides formed from CdO and ZnO alloyed with SnO2 and In2O3. J Vac Sci Technol A 15:1057–1062
Young DL, Moutinho H, Yan Y, Coutts TJ (2002) Growth and characterization of radio frequecy magnetron sputter-deposited zinc stannate, Zn2SnO4, thin films. J Appl Phys 92: 310–319
Young DL (2000) Electron transport in zinc stannate (Zn2SnO4). Ph. D. thesis, Colorado School of Mines
Minami T, Sonohara H, Kakumu T, Takata S (1995) Highly transparent and conductive Zn2In2O5 thin films prepared by RF magnetron sputtering. Jpn J Appl Phys 34:971–974
Van de Walle CG (2000) Hydrogen as a cause of doping in zinc oxide. Phys Rev Lett 85: 1012–1015
Raniero L, Ferreira I, Pimentel A, Goncalves A, Canhola P, Fortunato E, Martins R (2006) Role of hydrogen plasma on electrical and optical properties of ZGO, ITO and IZO transparent and conductive coatings. Thin Solid Films 511–512:295–298
Theys B, Sallet V, Jomard F, Lusson A, Rommeluere JF, Teukam Z (2002) Effects of intentionally introduced hydrogen on the electrical properties of ZnO layers grown by metalorganic chemical vapor deposition. J Appl Phys 91:3922–3924
Pearton SJ, Norton DP, Ip K, Heo YW, Steiner T (2005) Recent progress in processing and properties of ZnO Progress in Materials. Science 50:293–340
Van deWalle C, Nequgebauer J (2003) Universal alignment of hydrogen levels in semiconductors, insulators and solutions. Nature 423:626–628
Zhang DH, Brodie DE (1995) Photoresponse of polycrystalline ZnO films deposited by r.f. bias sputtering. Thin Solid Films 261:334–339
Zhang DH (1995) Fast photoresponse and the related change of crystallite barriers for ZnO films deposited by RF sputtering. J Phys D: Appl Phys 28:1273–1277
Takahashi Y, Kanamori M, Kondoh A, Minoura H, Ohya Y (1994) Photoconductivity of ultrathin zinc oxide films. Jpn J Appl Phys Part 1, 33:6611–6615
Studenikin SA, Golego N, Cocivera M (2000) Carrier mobility and density contributions to photoconductivity transients in polycrystalline ZnO films. J Appl Phys 87:2413–2421
Xirouchaki C, Kiriakidis G, Pedersen TF, Fritzsche H (1996) Photoreduction and oxidation of as-deposited microcrystalline indium oxide. J Appl Phys 79:9349–9352
Kim H-J, Almanza-Workman M, Chaiken A, Jackson WB, Jeans A, Kwon O, Luo H, Mei P, Perlov C, Taussig C, Jeffrey, F, Braymen S, Hauschildt J (2006) Roll-to-roll fabrication of active-matrix backplanes using self-aligned imprint lithography (SAIL). 6th Int. Meeting Information Display/5th Int. Display Manufacturing Conf. Daegu, Korea, 2006 Digest 1539–1543
US Patent 20050176182 (2005)
Xia Y, Whitesides GM, (1998) Soft lithography. Annu Rev Mater Sci 28:153–184
Quake SR, Scherer A (2000) From micro- to nanofabrication with soft materials. Science 290:1536–1540
Rogers JA, Nuzzo RG (2005, February) Recent progress in soft lithography. Mater today 8:50–56
Norland Products Inc. www.norlandprod.com
Kawazoe H, Yasukawa M, Hyodo H, Kurita M, Yanagi H, Hosono H (1997) P-type electrical conduction in transparent thin films of CuAlO2. Nature 389:939–942
Tate J, Jayaraj MK, Draeseke AD, Ulbrich T, Sleight AW, Vanaja KA, Nagarajan R, Wager JF, Hoffman RL (2002) P-type oxides for use in transparent diodes. Thin Solid Films 411: 119–124
Park S, Keszler DA, Valencia MM, Hoffman RL, Bender JP, Wager JF (2002) Transparent p-type conducting BaCu2S2 films. Appl Phys Lett 80:4293–4295
Yanagi H, Inoue S, Ueda K, Kawazoe H, Hosono H, Hamada N (2000) Electronic structure and optoelectronic properties of transparent p-type conducting CuAlO2. J Appl Phys 88: 4159–4163
Nagarajan R, Draeseke AD, Sleight AW, Tate J (2001) P-type conductivity in CuCr1-x MgxO2 films and powders. J Appl Phys 89:8022–8025
Ueda K, Hase T, Yanagi H, Kawazoe H, Hosono H, Ohta H, Orita M, Hirano M (2001) Epitaxial growth of transparent p-type conducting CuGaO2 thin films on sapphire (001) substrates by pulsed laser deposition. J Appl Phys, 89:1790–1793
Duan N, Sleigh AW, Jayaraj MK, Tate J (2000) Transparent p-type conducting CuScO2+x films. Appl Phys Lett 77:1325–1326
Acknowledgements
I would like to thank G. Herman and R. Hoffman introducing me to the field of transition metal oxide transistors and for making various samples, and C. Taussig, P. Mei, and C. Perlov for many consultations and support during this work.
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Jackson, W.B. (2009). Flexible Transition Metal Oxide Electronics and Imprint Lithography. In: Wong, W.S., Salleo, A. (eds) Flexible Electronics. Electronic Materials: Science & Technology, vol 11. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-74363-9_5
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