Non-linear model of nanoscale devices for memory application

Abstract

COMSOL multiphysics software based model has been developed for the mem-devices comprising of undoped and doped CdSe/starch quantum dots and CdS/PVA nanocomposites as active layer. The assembly of quantum dots/nanocomposites can be represented by an equivalent structure comprising of almost infinitely alternating repetition of building blocks, each block having conducting and non-conducting regions. The time-dependent inductance (L) along with time-dependent resistance (R) and capacitance (C) are used as model input and the solutions are obtained using semiconductor, electric circuit and ordinary differential equation module. From this study it is clear that the mem-behaviour of the as-fabricated nanodevices having $\frac{{R_{OFF} }}{{R_{ON} }} > 10$ can be well explained by the time-dependent R, C and L features of the nanoparticle assembly adopting COMSOL Multiphysics software. However, for devices with $\frac{{R_{OFF} }}{{R_{ON} }}$ < 10, hysteresis behavior is governed by only time-dependent R and C features. As higher (> 10) $\frac{{R_{OFF} }}{{R_{ON} }}$ values enhance efficiency of memory units, the present model incorporating time-dependent L in addition to time-dependent R and C will be useful for optimization in the device design for application as memory units.