Abstract
We present the results of a detailed study of the critical behavior in the a and b axis resistivity of TTF-TCNQ and TSeF-TCNQ. We find that in TTF-TCNQ, dρ a/dT and dρ b/dT diverge as T − Tc → 0+ with the same critical exponent while in TSeF-TCNQ, dρ a/dT and dρ b/dT diverge with different critical exponents. These results are compared with various models for the origin of the critical behavior in the resistivity.
Work supported by NSF under contract #NSF-DMR75-14360 and by the Louis B. Block Fund of the University of Chicago. We have also benefited from support of the Materials Research Laboratory by the NSF.
Alfred P. Sloan Research Fellow.
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© 1977 Akadémiai Kiadó
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Guidotti, D., Horn, P.M., Engler, E.M. (1977). Anisotropy in the critical behavior of TTF-TCNQ and TSeF-TCNQ. In: Pál, L., Grüner, G., Jánossy, A., Sólyom, J. (eds) Organic Conductors and Semiconductors. Lecture Notes in Physics, vol 65. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0012398
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DOI: https://doi.org/10.1007/BFb0012398
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