Skip to main content
Log in

Gold in gallium arsenide die-attach technology

  • Published:
Gold Bulletin Aims and scope Submit manuscript

Abstract

Gold plays an important role in leading-edge semiconductor technologies based on gallium arsenide. This metal is used extensively in contact metallizations and in solders for bonding gallium arsenide devices into packages. The quality of soldered joints made to this semiconductor depends critically on the choice of the metallization/solder combination and bonding temperature. A set of design guidelines for achieving sound joints has been derived from a metàllurgical study, which encompassed a representative selection of metallizations and solders employed in industry.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. D.V. Morgan, ‘Interdiffusion of metal films on gallium arsenide and indium phosphide’, inReliability and degradation: semiconductor devices and circuits, Ed. M.J. Howes and D.V. Morgan, Chichester, 1981, 151–89

  2. X. Zhang and A.E. Staton-Bevan, ‘A TEM investigation of NiAuGe ohmic contacts to GaAs’,Inst. Phys. Conf. Ser. no. 87, 1987,Section 4, 303–08

  3. T.S. Kuanet al., ‘Electron microscope studies of an alloyed Au/Ni/Au-Ge ohmic contact to GaAs’,J. Appl. Phys., 1983,54, 6952–57

    Article  CAS  Google Scholar 

  4. D.P. Miller, J.G. Harper and T.R. Perry, ‘High-temperature oxidation and vacuum dissociation studies on the A(111) and B(111) surfaces of gallium arsenide’,J. Electrochem. Soc., 1961,108, 1123–26

    Article  CAS  Google Scholar 

  5. D.C. Miller, ‘The alloying of gold and gold alloy ohmic contact metallizations with gallium arsenide’,J. Electrochem. Soc., 1980,127, 467–75

    Article  CAS  Google Scholar 

  6. T. Sebestyen, T. Menyhard and D. Szigethy, ‘In situ measurements of arsenic losses during annealing of usual evaporated contacts of GaAs Gunn diodes’,Electron. Lett., 1976,12, 96–97

    Article  CAS  Google Scholar 

  7. C.J. Madams, D.V. Morgan and M.J. Howes, ‘Outmigration of Ga from Au-GaAs interfaces’,Electron. Lett., 1975,11, 574–75

    Article  Google Scholar 

  8. P. Ramet al., ‘Diffusion of gallium in thin gold films on GaAs’,Thin Solid Films, 1987,150, 58–62

    Google Scholar 

  9. T. Sebestyen, I. Mojzes and D. Szigethy, ‘Use of Ga in metal-GaAs contacts to eliminate large As loss peaks’,Electron. Lett., 1980,16, 504–05

    Article  CAS  Google Scholar 

  10. H. Jones, ‘Rapid solidification of metals and alloys’,Inst. Metallurgists Monograph No. 8, London, 1982

  11. D.M. Jacobson and G. Humpston, ‘Gold coatings for fluxless soldering’,Gold Bull., 1989,22(1), 9–18

    CAS  Google Scholar 

  12. E.A. Fattakhov, T.D. Lisovskaya and A.V. Roshchina, ‘Mechanical strength of monocrystalline GaAs’,Izv. Akad, Nauk. SSSR, Neorg. Mater., 1980,16, 1669–71, (in Russian)

    CAS  Google Scholar 

  13. H.H. Manko, ‘Solders and soldering. Materials, design, production and analysis for reliable bonding’, 2nd edn., New York, 1979, 122

  14. K.S. Dogra, ‘A bismuth tin alloy for hermetic seals’,Bull. Bismuth Inst., 1987,52, 8–11

    Google Scholar 

  15. ‘Solder alloy data. Mechanical properties of solders and soldered joints’,Int. Tin Research Inst., Publ. No. 656, London, 1986

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Humpston, G., Jacobson, D.M. Gold in gallium arsenide die-attach technology. Gold Bull 22, 79–91 (1989). https://doi.org/10.1007/BF03214708

Download citation

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF03214708

Keywords

Navigation