Abstract
Low dislocation density single crystals of nickel have been grown at high ambient pressure by the Czochralski method. X-ray Laue picture shows that the crystals are strain-free. The dislocation density was determined to be <103/cm2 by the etching procedure. It was found that the necking and cone regions are very critical in the dislocation introduction in the crystals. An increase in the ambient pressure used during the growth seems to aid the crystal quality.
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Khanna, S.K., Rajan, K.G. Growth of low dislocation density single crystals of nickel. Bull. Mater. Sci. 8, 467–470 (1986). https://doi.org/10.1007/BF02744111
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DOI: https://doi.org/10.1007/BF02744111