Abstract
A simple theory of current and potential distributions along resistive electrodes is re-examined and generalized for non-linearized Tafel behavior. A model of a passivating electrode is discussed and the generalized theory extended to derive expressions for the current and potential profiles along a partially passivated electrode. The relevant expressions permit a predictive analysis of the feasibility of using the electrochemical passivation method for etch-stop control in fabrication of thin, single crystal silicon structures produced by anisotropic deep etching.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
R. L. Gealer, R. H. Hammerle, H. Karsten and H. S. Wroblowa,J. Appl. Electrochem. 18 (1988) 463.
B. E. Conway and E. Gileadi,Can. J. Chem. 41 (1963) 2447.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Wroblowa, H.S., Hammerle, R.H. & Gealer, R.L. Potential and current distributions along resistive electrodes. J Appl Electrochem 18, 469–472 (1988). https://doi.org/10.1007/BF01093765
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF01093765