Abstract
Phase change memory (PCM) is the best candidate device among next generation random access memory technologies. PCM has a potential to replace Flash memory due to non-volatility and in-place programmability, and low power consumption. Even though lifetime of PCM is longer than flash memory, wear leveling is needed because of non-uniformity of storage workload or malicious attack. In this paper, we propose a novel wear leveling algorithm for PCM as storage. Proposed algorithm extended the lifetime maximum 16 times and average 14 times in comparison to Segment Swapping algorithm.
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References
International Technology Roadmap for Semiconductors (ITRS) (2009) [Online]. Available: http://public.itrs/net
Zhou P, Zhao B, Yang J, Zhang Y (2009) A durable and energy efficient main memory using phase change memory technology. In: Proceedings international symposium on computer architecture (ISCA), pp 14–23, June 2009
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Choi, I., Shin, D. (2012). Wear Leveling for PCM Using Hot Data Identification. In: Kim, K., Ahn, S. (eds) Proceedings of the International Conference on IT Convergence and Security 2011. Lecture Notes in Electrical Engineering, vol 120. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-2911-7_12
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DOI: https://doi.org/10.1007/978-94-007-2911-7_12
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Online ISBN: 978-94-007-2911-7
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