Abstract
In ChapterĀ 3, a novel two-electrode light-emitting device structure is proposed. The device is a hybrid structure between a diode and a field-effect transistor. Compared to conventional OLEDs, the cathode is displaced one to several micrometers from the light-emission zone. As the light emission zone is not covered by metal, the device can be used for top emission or even as waveguide. The micrometer-sized distance between the cathode and the active region can be bridged by electrons with an enhanced field-effect mobility. Owing to this high charge carrier mobility, large current densities are possible. The external quantum efficiency at these high current densities is as high as that of conventional OLEDs using the same materials. In contrast to organic light-emitting field-effect transistors, only two electrodes are used. Moreover, lightemission in the novel device structure always occurs at a fixed position, irrespective of the applied bias, in contrast to LEOFETs where the emission zone can move within the channel by varying the bias conditions. The first section of this chapter describes the technology and the materials used to fabricate the device. Next, the device operation and the device performance are discussed. The electrical characteristics as well as the opto-electronic performance are studied. Suggestions for further improvement of the device performance are given in the last section of this chapter.
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Schols, S. (2011). Organic Light-Emitting Diodes with Field-Effect Electron Transport. In: Device Architecture and Materials for Organic Light-Emitting Devices. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-1608-7_3
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DOI: https://doi.org/10.1007/978-94-007-1608-7_3
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