Abstract
In this paper we present the results of applying a new algorithm to improve the quality of Delaunay triangulations for the numerical simulation of semiconductor devices using the control volume discretization method. The resulting triangulations are Delaunay triangulations, whose boundary triangles (triangles with at least one edge on the boundary or on a material interface) do not have obtuse angles opposite to any boundary or interface edges. In addition, the algorithm guarantees that the minimum and maximum angles of the triangles are bounded (minimum angle greater than or equal to 30° and maximum angle less than or equal to 120°), with the exception of a few triangles related with small angles of the boundary geometry.
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© 1998 Springer-Verlag/Wien
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Hitschfeld, N., Rivara, MC., Palma, M. (1998). Improving the quality of Delaunay triangulations for the control volume discretization method. In: De Meyer, K., Biesemans, S. (eds) Simulation of Semiconductor Processes and Devices 1998. Springer, Vienna. https://doi.org/10.1007/978-3-7091-6827-1_48
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DOI: https://doi.org/10.1007/978-3-7091-6827-1_48
Publisher Name: Springer, Vienna
Print ISBN: 978-3-7091-7415-9
Online ISBN: 978-3-7091-6827-1
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