Abstract
This document is part of Subvolume E 'New Data and Updates for several III-V (including mixed crystals) II-VI Compounds' of Volume 44 'Semiconductors' of Landolt-Börnstein - Group III 'Condensed Matter'.
It deals with the dielectric constant of InAsxSb1-x.
Contained Elements: As-In-Sb
Parent documents:
References
Kim, T.J., Yoon, J.J., Hwang, S.Y., Aspnes, D.E., Kim, Y.D., Kim, H.J., Chang, Y.C., Song, J.D.: Appl. Phys. Lett. 95 (2009) 111902.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2012 Springer-Verlag Berlin Heidelberg
About this chapter
Cite this chapter
da Silva, E.C.F. (2012). InAsxSb1-x: dielectric constant. In: Rössler, U. (eds) New Data and Updates for several III-V (including mixed crystals) and II-VI Compounds. Landolt-Börnstein - Group III Condensed Matter, vol 44E. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-23415-6_49
Download citation
DOI: https://doi.org/10.1007/978-3-642-23415-6_49
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-642-23414-9
Online ISBN: 978-3-642-23415-6