Abstract
The absorption of light in a semiconductor across the band gap creates free electrons and holes. In particular, for small particle size in powders1 these charge carriers can reach the surface of the semiconductor. At the surface they can react with chemicals.
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References
E.F. Schubert, Doping in III–V Semiconductors (Cambridge University Press, Cambridge, 1993)
S.M. Sze, Physics of Semiconductor Devices, 2nd edn. (John Wiley & Sons, New York, 1981)
S.L. Chuang, Physics of Optoelectronic Devices (John Wiley & Sons, New York, 1995)
A.L. Linsebigler, G. Lu, J.T. Yates, Chem. Rev. 95, 735–58 (1995)
D. Duonghong, E. Borgarello, M. Gr¨atzel, J. Am. Chem. Soc. 103, 4685 (1981)
K.Y. Jung, Y.Ch. Kang, S.B. Park, J. Mater. Sci. Lett. 16, 1848 (1997)
J.L. Yang, S.J. An, W.I. Park, G.-Ch. Yi, W. Choi, Adv. Mater. 16, 1661 (2004)
Canon Inc., www.canon.com/technology
B.F. Levine, J. Appl. Phys. 74, R1 (1993)
H.C. Liu, R. Dudek, A. Shen, E. Dupont, C.Y. Song, Z.R. Wasilewski, M. Buchanan, Appl. Phys. Lett. 79, 4237 (2001)
Fraunhofer-Institut f¨ur Angewandte Festk¨orperphysik, Freiburg, www. iaf.fraunhofer
M.D. Petroff, M.G. Stapelbroek, Blocked impurity band detectors, US Patent 4,568,960, filed 1980, awarded 1986
N.M. Haegel, Proc. SPIE 4999, 182 (2003)
F. Szmulowicz, F.L. Madarsz, J. Appl. Phys. 62, 2533 (1987)
H.Melchior, Demodulation and Photodetection Techniques, ed. by F.T. Arecchi,E.O. Schulz-Dubois. Laser Handbook, vol. 1 (North-Holland, Amsterdam, 1972), p. 725–835
G.E. Stillman, C.M. Wolfe, Semicond. Semimet. 12, 291 (1977)
Datasheet Position Sensitive Photodiodes, DL-100–7-KER pin (2002), Silicon Sensor GmbH, Berlin (Germany), www.silicon-sensor.com
S.M. Sze, D.J. Coleman, A. Loya, Solid State Electron. 14, 1209 (1971)
D. Kuhl, Herstellung und Charakterisierung von MSM Detektoren, PhD Thesis, Technische Universit¨at Berlin, 1992
S.Y. Chou, M.Y. Liu, IEEE J. Quantum Electr. QE-28, 2358 (1992)
R.J. McIntyre, IEEE Trans. Electron Devices ED-13, 164 (1966)
R.D. Baertsch, IEEE Trans. Electron Devices ED-13, 987 (1966)
W.S. Boyle, G.E. Smith, Bell Syst. Tech. J., 49, 587 (1970)
J.D.E. Beynon, D.R. Lamb (eds.), Charge-Coupled Devices and Their Applications (McGraw-Hill, Maidenhead, 1977)
J.-W. Shi, K.-G. Gan, Y.-J. Chiu, Y.-H. Chen, C.-K. Sun, Y.-J. Yang, J.E.Bowers, IEEE Phot. Technol. Lett. 16, 623 (2001)
A. Goetzberger, E.H. Nicollian, Bell Syst. Tech. J. 46, 513 (1967)
J.D.E. Beynon, Microelectron. 7, 7 (1975)
Charge-coupled device (CCD) image sensors, MTD/PS-0218, Rev. 1 (2001),Eastman Kodak Company, Rochester, NY, www.kodak.com/go/ccd
J.E. Carnes,W.F. Kosonocky, E.G. Ramberg, IEEE Trans. Electron Devices ED-19, 798 (1972)
C.H. Sequin, M.F. Tompsett, Charge Transfer Devices (Academic, New York, 1975)
D.J. Burt, Int. Conf. Technol. Appl. CCD, University of Edinburgh, 1974, p. 1
SONY Corporation, www.sony.net
B.E. Bayer, Color imaging array, US Patent 3,971,065, filed 1975, awarded 1976
Foveon Inc., www.foveon.com
R.B. Merrill, Color separation in an active pixel cell imaging array using a triple-well structure, US Patent 5,965,875, filed 1998, awarded 1999
Datasheet Avalanche Photodiode Array, AD-LA-16–9-DIL 18 (2002), Silicon Sensor GmbH, Berlin, Germany, www.silicon-sensor.com
Datasheet InGaAs Linear Photodiode Array, SU1024LE-1.7 (2003), Sensors Unlimited, Inc., www.sensorsinc.com
Datasheet Quadrant Photodiode with Position Sensing, QD50–0-SD (2004), Centrovision, OSI Systems, Inc., Newbury Park, CA, USA, www.centrovision.com
J.J. Loferski, The First Forty Years: A Brief History of the Modern Photovoltaic Age. Progress in Photovoltaics, vol. 1, (1993), pp. 67–78
Published in ‘Progress in Photovoltaics: Research and Applications’. The latest tables (version 33) can be found in M.A. Green, K. Emery, Y. Hishikawa, W. Warta, Prog. Photovolt: Res. Appl. 17, 85 (2009)
R. Leemans, W. Cramer, The IIASA database for mean monthly values of temperature, precipitation and cloudiness on a global terrestrial grid, Research Report RR-91–18. International Institute of Applied Systems Analyses,Laxenburg, (1991), pp. 61
W.W. G¨artner, Phys. Rev. 116, 84 (1959)
X. Liu, J. Sites, J. Appl. Phys. 75, 577 (1994)
H.H. Hovel, Semicond. Semimet. 11, 8 (1975)
S. Hegedus, D. Desai, C. Thompson, Prog. Photovolt: Res. Appl. 15, 587–602 (2007)
C.H. Henry, J. Appl. Phys. 51, 4494 (1980)
W. Shockley, H.-J. Queisser, J. Appl. Phys. 32, 510 (1961)
Th. Kirchartz, U. Rau, Phys. Stat. Sol. (A) 205, 2737 (2008)
J.H. Werner, S. Kolodinski, H.-J. Queisser, Phys. Rev. Lett. 72, 3851 (1994)
T. Markvart, Phys. Stat. Sol. (A) 205, 2752 (2008)
A. Hauser, I. Melnyk, P. Fath, S. Narayanan, S. Roberts, T.M. Bruton, Proc. of 3rd World Conference on Photovoltaic Energy Conversion, vol. 2, 1447 (2003)
M.B. Prince, J. Appl. Phys. 26, 534 (1955)
J. Mandelkorn, J.H. Lamneck, Conf. Rec. 9th IEEE Photovoltaic Spec. Conf. (IEEE, New York, 1972), p. 83
A. Woyte, J. Nijs, R. Belmans, Sol. Energy 74, 217 (2003)
J. W. Bishop, Solar Cells 25, 73 (1988)
K. Wambach, S. Schlenker, I. R¨over, Deutsche Solar AG, Freiberg
R.A. Arndt, J.F. Allison, J.G. Haynos, A. Meulenberg Jr., Conf. Rec. 11th IEEE Photovoltaic Spec. Conf. (IEEE, New York, 1975), p. 40
J.H. Werner, K. Taretto, U. Rau, Solid State Phenom. 80–81, 299 (2001)
M. Imaizumi, T. Ito, M. Yamaguchi, K. Kaneko, J. Appl. Phys. 81, 7635 (1997)
A.K. Ghosh, C. Fishman, T. Feng, J. Appl. Phys. 51, 446 (1980)
K.R. Taretto: Modeling and characterization of polycrystalline silicon for solar cells and microelectronics, PhD Thesis, Universit¨at Stuttgart, 2003 1266. NREL, www.nrel.gov/gis/solar.html
Australian CRC for Renewable Energy Ltd. (ACRE), acre.murdoch.edu.au
R.R. King, D.C. Law, K.M. Edmondson, C.M. Fetzer, G.S. Kinsey, H. Yoon, R.A. Sherif, N.H. Karam, Appl. Phys. Lett. 90, 183516 (2007)
V. Probst, J. Palm, S. Visbeck, T. Niesen, R. T¨olle, A. Lerchenberger, M. Wendl, H. Vogt, H. Calwer, W. Stetter, F. Karg, Sol. Energy Mater. Sol.Cells 90, 3115 (2006)
H. Hoppe, N.S. Sariciftci, J. Mater. Res. 19, 1924 (2004)
S.E. Shaheen, C.J. Brabec, N.S. Sariciftci, F. Padinger, T. Fromherz, J.C.Hummelen, Appl. Phys. Lett. 78, 841 (2001)
V. Shrotriya, G. Li, Y. Yao, T. Moriarty, K. Emery, Y. Yang, Adv. Funct. Mater. 16, 2016 (2006)
T. Trupke, M.A. Green, P. W¨urfel, J. Appl. Phys. 92, 1668 (2002)
T. Trupke, M.A. Green, P. W¨urfel, J. Appl. Phys. 92, 4117 (2002)
A. Luque, A. Mart´ı, Phys. Rev. Lett. 78, 5014 (1997)
A. Franceschetti, S. Lanya, G. Bester, Low-dimensional systems and nanostructures.Physica E 41, 15 (2008)
A. Luque, A. Mart´ı, A.J. Nozik, MRS Bull. 32, 236 (2007)
S. Suraprapapich, S. Thainoi, S. Kanjanachuchai, S. Panyakeow, Sol. Energy Mater. Sol. Cells 90, 2968 (2006)
F. Dimroth, Physica Status Solidi (C) 3, 373 (2006)
R.R. King, D.E. Joslin, H. Karam, Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material, US patent 6,316,715, filed 2000, awarded 2001
Gerg¨o L´etay, Modellierung von III–V Solarzellen, PhD Thesis, Universit¨at Konstanz, 2003
Spectrolab, www.spectrolab.com
F. Dimroth, S. Kurtz, MRS Bull. 32, 230 (2007)
US Department of Energy, www.eere.energy.gov/solar
J.H. Werner, Adv. Solid State Phys. (Festk¨orperprobleme) 44, 51 (2004)
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Grundmann, M. (2010). Light-to-Electricity Conversion. In: The Physics of Semiconductors. Graduate Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-13884-3_21
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DOI: https://doi.org/10.1007/978-3-642-13884-3_21
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