Abstract
A microscopic theory is presented for the Coulomb-interacting electron-hole system in an optically excited semiconductor that is probed by weak THz radiation. The relevant equations for the THz response are summarized and numerically evaluated for different optical excitation conditions. Experimental results are presented for a high-quality InGaAs/GaAs quantum-well system under resonant excitation. Formation and decay of excitonic populations are investigated.
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Steiner, J.T. et al. (2008). Interaction of THz Radiation with Semiconductors: Microscopic Theory and Experiments. In: Haug, R. (eds) Advances in Solid State Physics. Advances in Solid State Physics, vol 47. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74325-5_18
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DOI: https://doi.org/10.1007/978-3-540-74325-5_18
Publisher Name: Springer, Berlin, Heidelberg
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