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Photoemission Studies of Graphene on SiC: Growth, Interface, and Electronic Structure

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Advances in Solid State Physics

Part of the book series: Advances in Solid State Physics ((ASSP,volume 47))

Abstract

The possibility to grow well ordered graphitic films on SiC(0001) surfaces with thicknesses down to a single graphene layer is promising for future applications. Photoelectron spectroscopy (PES) is a versatile technique for investigating a variety of fundamentals and technologically relevant properties of this system. We survey results from recent PES studies with a focus on the growth of graphene and few layer graphene, the electronic and structural properties of the interface to the SiC substrate, and the electronic structure of the films.

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Author information

Authors and Affiliations

  1. Advanced Light Source, Lawrence Berkely National Laboratory, USA

    A. Bostwick, T. Ohta & E. Rotenberg

  2. Lehrstuhl für Technische Physik, Friedrich-Alexander-Universität Erlangen-Nürnberg, Germany

    K. V. Emtsev, L. Ley, J. L. McChesney, F. Speck & Th. Seyller

  3. Abteilung Molekülphysik, Fritz-Haber-Institut, Germany

    K. Horn & T. Ohta

  4. Department of Physics, La Trobe University, Australia

    E. Huwald & J. Riley

Authors
  1. A. Bostwick
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  2. K. V. Emtsev
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  3. K. Horn
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  4. E. Huwald
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  5. L. Ley
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  6. J. L. McChesney
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  7. T. Ohta
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  8. J. Riley
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  9. E. Rotenberg
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  10. F. Speck
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  11. Th. Seyller
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Editor information

Editors and Affiliations

  1. Abteilung Nanostrukturen Institut für Festkörperphysik, Universität Hannover, Appelstr. 2, 30167, Hannover, Germany

    Rolf Haug

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Bostwick, A. et al. (2008). Photoemission Studies of Graphene on SiC: Growth, Interface, and Electronic Structure. In: Haug, R. (eds) Advances in Solid State Physics. Advances in Solid State Physics, vol 47. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-74325-5_13

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