Summary
The electrodynamic simulation of 3D high-voltage technical devices can be performed under the electro-quasistatic assumption. In order to avoid large spatial discretization domains, a Finite-Element-Method (FEM) is coupled to a Boundary-Element-Method (BEM) which implicitly asserts the electrophysical asymptotic attenuation condition. A symmetric FEM-BEM coupled formulation in time domain is presented. Numerical results are shown for the simulation of a three dimensional high-voltage application.
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© 2007 Springer-Verlag Berlin Heidelberg
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Steinmetz, T. et al. (2007). Symmetric Coupling of the Finite-Element and the Boundary-Element Method for Electro-Quasistatic Field simulations. In: Ciuprina, G., Ioan, D. (eds) Scientific Computing in Electrical Engineering. Mathematics in Industry, vol 11. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-71980-9_33
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DOI: https://doi.org/10.1007/978-3-540-71980-9_33
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-71979-3
Online ISBN: 978-3-540-71980-9
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