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Quantum Wells, Superlattices, and Band-Gap Engineering

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Springer Handbook of Electronic and Photonic Materials

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Abstract

This chapter reviews the principles of bandgap engineering and quantum confinement in semiconductors, with a particular emphasis on the optoelectronic properties of quantum wells. The chapter begins with a review of the fundamental principles of bandgap engineering and quantum confinement. It then describes the optical and electronic properties of semiconductor quantum wells and superlattices at a tutorial level, before describing the principal optoelectronic devices. The topics covered include edge-emitting lasers and light-emitting diodes (GlossaryTerm

LED

s), resonant cavity LEDs and vertical-cavity surface-emitting lasers (GlossaryTerm

VCSEL

s), quantum cascade lasers, quantum well solar cells, superlattice avalanche photodiodes, infrared detectors, and quantum well light modulators. The chapter concludes with a brief discussion of new research directions on quantum dot and nanowire structures.

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Authors and Affiliations

  1. Dept. of Physics and Astronomy, University of Sheffield, Sheffield, UK

    Mark Fox

  2. Image Sensor Group, ON-Semiconductor, San José, USA

    Radu Ispasoiu

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  1. Mark Fox
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  2. Radu Ispasoiu
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Correspondence to Mark Fox .

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Editors and Affiliations

  1. University of Saskatchewan, Saskatoon, Canada

    Safa Kasap

  2. Formerly with Leonardo MW Ltd, Southampton, UK

    Peter Capper

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Fox, M., Ispasoiu, R. (2017). Quantum Wells, Superlattices, and Band-Gap Engineering. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Cham. https://doi.org/10.1007/978-3-319-48933-9_40

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