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Dielectric Materials for Microelectronics

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Springer Handbook of Electronic and Photonic Materials

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Abstract

Dielectrics are an important class of thin-film electronic materials for microelectronics. Applications include a wide swathe of device applications, including active devices such as transistors and their electrical isolation, as well as passive devices, such as capacitors . In a world dominated by Si-based device technologies, the properties of thin-film dielectric materials span several areas. Most recently, these include high-permittivity applications, such as transistor gate and capacitor dielectrics, as well as low-permittivity materials, such as inter-level metal dielectrics, operating at switching frequencies in the gigahertz regime for the most demanding applications.

This chapter provides a survey of the various dielectric material systems employed to address the very substantial challenge associated with the scaling Si-based integrated circuit technology. A synopsis of the challenge of device scaling is followed by an examination of the dielectric materials employed for transistors, device isolation, memory and interconnect technologies. This is presented in view of the industry roadmap which captures the consensus for device scaling (and the underlying economics) – the International Technology Roadmap for Semiconductors.

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Acknowledgements

RMW gratefully acknowledges the many discussions and hard work of his colleagues and students engaged in gate-stack research. This work is supported in part by the Erik Jonsson Distinguished Chair at the University of Texas at Dallas.

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  1. Dept. of Materials Science and Engineering, University of Texas at Dallas, Richardson, USA

    Robert M. Wallace

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  1. University of Saskatchewan, Saskatoon, Canada

    Safa Kasap

  2. Formerly with Leonardo MW Ltd, Southampton, UK

    Peter Capper

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Wallace, R.M. (2017). Dielectric Materials for Microelectronics. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Cham. https://doi.org/10.1007/978-3-319-48933-9_27

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