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Silicon-Germanium: Properties, Growth and Applications

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Springer Handbook of Electronic and Photonic Materials

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Abstract

Silicon-germanium is an important material that is used for the fabrication of SiGe heterojunction bipolar transistors and strained Si metal-oxide-semiconductor (GlossaryTerm

MOS

) transistors for advanced complementary metal-oxide-semiconductor (GlossaryTerm

CMOS

) and BiCMOS (bipolar CMOS) technologies. It also has interesting optical properties that are increasingly being applied in silicon-based photonic devices. The key benefit of silicon-germanium is its use in combination with silicon to produce a heterojunction. Strain is incorporated into the silicon-germanium or the silicon during growth, which also gives improved physical properties such as higher values of mobility. This chapter reviews the properties of silicon-germanium, beginning with the electronic properties and then progressing to the optical properties. The growth of silicon-germanium is considered, with particular emphasis on the chemical vapour deposition technique and selective epitaxy. Finally, the properties of polycrystalline silicon-germanium are discussed in the context of its use as a gate material for MOS transistors.

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References

  1. R. Braunstein, A.R. Moore, F. Herman: Phys. Rev. 109, 695 (1958)

    CAS  Google Scholar 

  2. S.S. Iyer, G.L. Patton, J.M.C. Stork, B.S. Meyerson, D.L. Harame: IEEE Trans. Electron Devices 36, 2043 (1989)

    CAS  Google Scholar 

  3. C.A. King, J.L. Hoyt, J.F. Gibbons: IEEE Trans. Electron Devices 36, 2093 (1989)

    CAS  Google Scholar 

  4. H. Miyata, T. Yamada, D.K. Ferry: Appl. Phys. Lett. 62, 2661 (1993)

    CAS  Google Scholar 

  5. T. Vogelsang, K.R. Hofmann: Appl. Phys. Lett. 63, 186 (1993)

    CAS  Google Scholar 

  6. J. Welser, J.L. Hoyt, J.F. Gibbons: IEEE Electron Device Lett. 15, 100 (1994)

    CAS  Google Scholar 

  7. A. Sadak, K. Ismile, M.A. Armstrong, D.A. Antoniadis, F. Stern: IEEE Trans. Electron Devices 43, 1224 (1996)

    Google Scholar 

  8. B. Jagannathan, M. Khater, F. Pagette, J.-S. Rieh, D. Angell, H. Chen, J. Florkey, F. Golan, D.R. Greenberg, R. Groves, S.J. Jeng, J. Johnson, E. Mengistu, K.T. Schonenberger, C.M. Schnabel, P. Smith, A. Stricker, D. Ahlgren, G. Freeman, K. Stein, S. Subbanna: IEEE Electron Device Lett. 23, 258 (2002)

    CAS  Google Scholar 

  9. Z.A. Shafi, P. Ashburn, G.J. Parker: IEEE J. Solid State Circuits 25, 1268 (1990)

    Google Scholar 

  10. J.M. Matthews, A.E. Blakeslee: J. Cryst. Growth 27, 118 (1974)

    CAS  Google Scholar 

  11. J.M. Matthews, A.E. Blakeslee: J. Cryst. Growth 32, 265 (1975)

    Google Scholar 

  12. R. People, J.C. Bean: Appl. Phys. Lett. 47, 322 (1985)

    CAS  Google Scholar 

  13. S.C. Jain, T.J. Gosling, J.R. Willis, R. Bullough, P. Balk: Solid State Electron. 35, 1073 (1992)

    CAS  Google Scholar 

  14. S. Margalit, A. Bar-lev, A.B. Kuper, H. Aharoni, A. Neugroschel: J. Cryst. Growth 17, 288 (1972)

    CAS  Google Scholar 

  15. O.W. Holland, C.W. White, D. Fathy: Appl. Phys. Lett. 51, 520 (1987)

    CAS  Google Scholar 

  16. D.C. Paine, C. Caragianis, A.F. Schwartzman: J. Appl. Phys. 70, 5076 (1991)

    CAS  Google Scholar 

  17. W.S. Liu, E.W. Lee, M.A. Nicolet, V. Arbet-Engels, K.L. Wang, N.M. Abuhadba, C.R. Aita: J. Appl. Phys. 71, 4015 (1992)

    CAS  Google Scholar 

  18. J.P. Zhang, P.L.F. Hemment, S.M. Newstead, A.R. Powell, T.E. Whall, E.H.C. Parker: Thin Solid Films 222, 141 (1992)

    CAS  Google Scholar 

  19. M.A. Rabie, Y.M. Haddara, J. Carette: J. Appl. Phys. 98, 074904 (2005)

    Google Scholar 

  20. D. Nayak, K. Kamjoo, J.C.S. Woo, J.S. Park, K.L. Wang: Appl. Phys. Lett. 56, 66 (1990)

    CAS  Google Scholar 

  21. M. Mukhopadhyay, S.K. Ray, C.K. Maiti, D.K. Nayak, Y. Shiraki: Appl. Phys. Lett. 65, 895 (1994)

    CAS  Google Scholar 

  22. T. David, A. Benkouider, J.-N. Aqua, M. Cabie, L. Favre, T. Neisius, M. Abbarchi, M. Naffouti, A. Ronda, K. Liu, I. Berbezier: J. Phys. Chem. C 119, 24606 (2015)

    CAS  Google Scholar 

  23. D.V. Lang, R. People, J.C. Bean, A.M. Sergent: Appl. Phys. Lett. 47, 1333 (1985)

    CAS  Google Scholar 

  24. J. Eberhardt, E. Kasper: Mater. Sci. Eng. B 89, 93 (2002)

    Google Scholar 

  25. C.D. Thurmond: J. Electrochem. Soc. 122, 1133 (1975)

    CAS  Google Scholar 

  26. J. Poortmans, S.C. Jain, D.H.J. Totterdell, M. Caymax, J.F. Nijs, R.P. Mertens, R. Van Overstraeten: Solid State Electron. 36, 1763 (1993)

    CAS  Google Scholar 

  27. T. Manku, A. Nathan: J. Appl. Phys. 69, 8414 (1991)

    CAS  Google Scholar 

  28. T. Manku, A. Nathan: Phys. Rev. B 43, 12634 (1991)

    CAS  Google Scholar 

  29. J. Poortmans: Low Temperature Epitaxial Growth of Silicon and Strained Si1−xGex Layers and Their Application in Bipolar Transistors, PhD Thesis (University of Leuven, Leuven 1993)

    Google Scholar 

  30. J.M. McGregor, T. Manku, J.-P. Noël, D.J. Roulston, A. Nathan, D.C. Houghton: J. Electron. Mater. 22(3), 319 (1993)

    CAS  Google Scholar 

  31. M.V. Fischetti, S.E. Laux: J. Appl. Phys. 80, 2234 (1996)

    CAS  Google Scholar 

  32. C.W. Leitz, M.T. Currie, M.L. Lee, Z.-Y. Cheng, D.A. Antoniadis, E.A. Fitzgerald: J. Appl. Phys. 92, 3745 (2002)

    CAS  Google Scholar 

  33. D.J. Robbins, L.T. Canham, S.J. Barnett, A.D. Pitt, P. Calcott: J. Appl. Phys. 71, 1407 (1992)

    CAS  Google Scholar 

  34. N.L. Rowell, J.-P. Noel, D.C. Houghton, A. Wang, D.D. Perovic: J. Vac. Sci. Technol. B 11, 1101 (1993)

    CAS  Google Scholar 

  35. D.A. Grutzmacher, T.O. Sedgwick, G.A. Northrop, A. Zaslavsky, A.R. Powell, V.P. Kesan: J. Vac. Sci. Technol. B 11, 1083 (1993)

    Google Scholar 

  36. J. Brunner, J. Nutzel, M. Gail, U. Menczigar, G. Abstreiter: J. Vac. Sci. Technol. B 11, 1097 (1993)

    CAS  Google Scholar 

  37. K. Terashima, M. Tajima, T. Tatsumi: J. Vac. Sci. Technol. B 11, 1089 (1993)

    CAS  Google Scholar 

  38. H. Prestling, T. Zinke, A. Splett, H. Kibbel, M. Jaros: Appl. Phys. Lett. 69, 2376 (1996)

    Google Scholar 

  39. L. Masarotto, J.M. Hartmann, G. Bremond, G. Rolland, A.M. Papon, M.N. Semeria: J. Cryst. Growth 255, 8 (2003)

    CAS  Google Scholar 

  40. J.S. Park, T.L. Lin, E.W. Jones, H.M. Del Castillo, S.D. Gunapall: Appl. Phys. Lett. 64, 2370 (1994)

    CAS  Google Scholar 

  41. S.S. Murtaza, J.C. Cambell, J.C. Bean, L.J. Peticolas: IEEE Photon. Tech. Lett. 8, 927 (1996)

    Google Scholar 

  42. D.J. Robbins, M.B. Stanaway, W.Y. Leong, R.T. Carline, N.T. Gordon: Appl. Phys. Lett. 66, 1512 (1995)

    CAS  Google Scholar 

  43. A. Chin, T.Y. Chang: Lightwave Technol. 9, 321 (1991)

    CAS  Google Scholar 

  44. R. People, J.C. Bean, C.G. Bethia, S.K. Sputz, L.J. Peticolas: Appl. Phys. Lett. 61, 1122 (1992)

    CAS  Google Scholar 

  45. P. Kruck, M. Helm, T. Fromherz, G. Bauer, J.F. Nutzel, G. Abstreiter: Appl. Phys. Lett. 69, 3372 (1996)

    CAS  Google Scholar 

  46. R.A. Soref, L. Friedman, G. Sun: Superlattices Microstruct. 23, 427 (1998)

    CAS  Google Scholar 

  47. G. Sun, L. Friedman, R.A. Soref: Superlattices Microstruct. 22, 3 (1998)

    Google Scholar 

  48. J. Halpin, S. Rhead, A.M. Sanchez, M. Myronov, D.R. Leadley: Semicond. Sci. Technol. 30, 114009 (2015)

    Google Scholar 

  49. J.H. Bahng, K.J. Kim, H. Ihm, J.Y. Kim, H.L. Park: J. Phys. Condens. Matter 13, 777 (2001)

    CAS  Google Scholar 

  50. J. Weber, M.I. Alonso: Phys. Rev. B 40, 5684 (1989)

    Google Scholar 

  51. H. Landolt, R. Bornstein: Numerical Data and Functional Relationships in Science and Technology, Vol. III/17a, ed. by O. Madelung (Springer, Berlin, Heidelberg, New York 1982)

    Google Scholar 

  52. G.S. Mitchard, T.C. McGill: Phys. Rev. B 25, 5351 (1982)

    CAS  Google Scholar 

  53. M. Meuris, S. Verhaverbeke, P.W. Mertens, M.M. Heyns, L. Hellemans, Y. Bruynseraede, A. Philipessian: Jpn. J. Appl. Phys. 31, L1514 (1992)

    CAS  Google Scholar 

  54. A. Ishizaki, Y. Shiraki: J. Electrochem. Soc. 129, 666 (1986)

    Google Scholar 

  55. B.S. Meyerson, F.J. Himpsel, K.J. Uram: Appl. Phys. Lett. 57, 1034 (1990)

    CAS  Google Scholar 

  56. G.S. Higashi, Y.T. Chabal, G.W. Trucks, K. Raghavachari: Appl. Phys. Lett. 56, 656 (1990)

    CAS  Google Scholar 

  57. F.W. Smith, G. Ghidini: J. Electrochem. Soc. 129, 1300 (1982)

    CAS  Google Scholar 

  58. G. Ghidini, F.W. Smith: J. Electrochem. Soc. 131, 2924 (1984)

    CAS  Google Scholar 

  59. J.L. Regolini, D. Bensahel, E. Scheid, J. Mercier: Appl. Phys. Lett. 54, 658 (1989)

    CAS  Google Scholar 

  60. M. Racanelli, D.W. Greve: Appl. Phys. Lett. 56, 2524 (1990)

    CAS  Google Scholar 

  61. G.R. Srinivasan, B.S. Meyerson: J. Electrochem. Soc. 134, 1518 (1987)

    CAS  Google Scholar 

  62. M. Racanelli, D.W. Greve, M.K. Hatalis, L.J. van Yzendoorn: J. Electrochem. Soc. 138, 3783 (1991)

    CAS  Google Scholar 

  63. D.J. Robbins, J.L. Glasper, A.G. Cullis, W.Y. Leong: J. Appl. Phys. 69, 3729 (1991)

    CAS  Google Scholar 

  64. A. Ishitani, H. Kitajima, N. Endo, N. Kasai: Jpn. J. Appl. Phys. 28, 841 (1989)

    CAS  Google Scholar 

  65. Y. Zhong, M.C. Ozturk, D.T. Grider, J.J. Wortman, M.A. Littlejohn: Appl. Phys. Lett. 57, 2092 (1990)

    CAS  Google Scholar 

  66. Y. Kiyota, T. Udo, T. Hashimoto, A. Kodama, H. Shimamoto, R. Hayami, E. Ohue, K. Washio: IEEE Trans. Electron Devices 49, 739 (2002)

    CAS  Google Scholar 

  67. Y. Yamamoto, S. Lischke, L. Zimmerman, D. Knoll, J. Murota, B. Tillack: ECS Trans. 67, 123 (2015)

    CAS  Google Scholar 

  68. J.M. Bonar: Process Development and Characterisation of Silicon and Silicon–Germanium Grown in a Novel Single-Wafer LPCVD System, PhD Thesis (University of Southampton, Southampton 1996)

    Google Scholar 

  69. H. Ye, J. Yu: Sci. Technol. Adv. Mater. 15, 024601 (2014)

    CAS  Google Scholar 

  70. C. Zhao, S. Wen, Q. Hou, W. Qiu, Y. Xing, S. Su, B. Cheng: J. Phys. Chem. Solids 90, 87 (2016)

    CAS  Google Scholar 

  71. T.-J. King, K. C. Saraswat: IEDM Tech. Dig. (IEEE, 1991) p. 567

    Google Scholar 

  72. T.-J. King, K.C. Saraswat: IEEE Trans. Electron Devices 41, 1581 (1994)

    CAS  Google Scholar 

  73. J.A. Tsai, A.J. Tang, T. Noguchi, R. Reif: J. Electrochem. Soc. 142, 3220 (1995)

    CAS  Google Scholar 

  74. T.-J. King, J.R. Pfiester, K.C. Saraswat: IEEE Electron Device Lett. 12, 533 (1991)

    CAS  Google Scholar 

  75. C. Salm, D.T. van Veen, D.J. Gravesteijn, J. Holleman, P.H. Woerlee: J. Electrochem. Soc. 144, 3665 (1997)

    CAS  Google Scholar 

  76. Y.V. Ponomarev, P.A. Stolk, C.J.J. Dachs, A.H. Montree: IEEE Trans. Electron Devices 47, 1507 (2000)

    CAS  Google Scholar 

  77. V.D. Kunz, C.H. de Groot, S. Hall, P. Ashburn: IEEE Trans. Electron Devices 50, 1480 (2003)

    CAS  Google Scholar 

  78. P. Ashburn: Silicon-Germanium Heterojunction Bipolar Transistors (Wiley, Chichester 2003)

    Google Scholar 

  79. D.S. Bang, M. Cao, A. Wang, K.C. Saraswat, T.-J. King: Appl. Phys. Lett. 66, 195 (1995)

    CAS  Google Scholar 

  80. I.R.C. Post, P. Ashburn: IEEE Trans. Electron Devices 38, 2442 (1991)

    CAS  Google Scholar 

  81. T.B. Asafa, A. Witvrouw, B.S. Morcos, K. Vanstreels, S.A.M. Said: Appl. Phys. A 116, 751 (2014)

    CAS  Google Scholar 

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Author information

Authors and Affiliations

  1. Dept. of Electrical and Computer Engineering, McMaster University, Hamilton, Canada

    Yaser M. Haddara

  2. School of Electronics and Computer Science, University of Southampton, Southampton, UK

    Peter Ashburn

  3. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, Australia

    Darren M. Bagnall

Authors
  1. Yaser M. Haddara
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  2. Peter Ashburn
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  3. Darren M. Bagnall
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Corresponding author

Correspondence to Yaser M. Haddara .

Editor information

Editors and Affiliations

  1. University of Saskatchewan, Saskatoon, Canada

    Safa Kasap

  2. Formerly with Leonardo MW Ltd, Southampton, UK

    Peter Capper

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Haddara, Y.M., Ashburn, P., Bagnall, D.M. (2017). Silicon-Germanium: Properties, Growth and Applications. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Cham. https://doi.org/10.1007/978-3-319-48933-9_22

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