Abstract
The aim of this chapter is to convey the basic principles of x-ray and electron diffraction, as used in the structural characterization of semiconductor heterostructures. A number of key concepts associated with radiation-material and particle-material interactions are introduced, with emphasis placed on the nature of the signal used for sample interrogation. Various modes of imaging and electron diffraction are then described, followed by a brief appraisal of the main techniques used to prepare electron-transparent membranes for TEM analysis. A number of case studies on electronic and photonic material systems are then presented in the context of a growth or device development program; these emphasize the need to use complementary techniques when characterizing a given heterostructure.
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Acknowledgements
As ever, there are many people one wishes to acknowledge for their involvement in the growth, processing and underpinning characterisation research programmes drawn from to illustrate this chapter. University of Nottingham: with thanks to Tom Foxon, T.S. Cheng, Sergei Novikov and Chris Statton for the provision of MBE GaN samples and supporting XRD analysis; and to Mike Fay for GaAs CBED patterns. University of Cambridge: with thanks to Colin Humphreys for provision of instrumentation; Chris Boothroyd for STEM data on the SiGe and GaN samples; Michael Natusch for GaN EELS data; Robin Taylor for RHEED stage development; David Tricker for the Si-doped GaN micrograph; and Yan Xin for the GaN images used for dislocation analysis. University of Warwick: with thanks to Richard Kubiak and E.H.C. Parker for supplying SiGe/Si samples. Polish academy of Sciences, Warsaw: with thanks to Jan Weyher for homoepitaxial GaN samples. With thanks also to the EPSRC for funding support.
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Brown, P.D. (2017). Structural Characterization. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Cham. https://doi.org/10.1007/978-3-319-48933-9_17
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