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Wide-Bandgap II-VI Semiconductors: Growth and Properties

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Springer Handbook of Electronic and Photonic Materials

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Abstract

Wide-bandgap II–VI compounds are been applied to optoelectronic devices, especially light-emitting devices in the short-wavelength region of visible light, because of their direct gap and suitable bandgap energies. Many methods have been extensively applied to grow high-quality films and bulk single crystals from the vapor and liquid phases.

This chapter firstly discusses the basic properties and phase diagrams of wide-bandgap II–VI compounds such as ZnS, ZnO, ZnSe, ZnTe, CdSe and CdTe. Then the growth methods and recent progress in films and bulk crystal growth are reviewed. In the epitaxial growth methods, the focus is on liquid-phase epitaxy (GlossaryTerm

LPE

), vapor-phase epitaxy (GlossaryTerm

VPE

) containing conventional VPE, hot-wall epitaxy (GlossaryTerm

HWE

), metalorganic chemical vapor deposition (GlossaryTerm

MOCVD

) or metalorganic phase epitaxy (GlossaryTerm

MOVPE

), molecular-beam epitaxy (GlossaryTerm

MBE

) and atomic-layer epitaxy (GlossaryTerm

ALE

). In bulk crystal growth, two typical growth methods, chemical/physical vapor transport (GlossaryTerm

CVT

/GlossaryTerm

PVT

) and Bridgman techniques, are introduced.

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Authors and Affiliations

  1. Inst. of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai, Japan

    Minoru Isshiki

  2. Advanced Microelectronic Materials Development Center, Rasa Industries Ltd., Tokyo, Japan

    Jifeng Wang

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  1. Minoru Isshiki
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  2. Jifeng Wang
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Correspondence to Minoru Isshiki .

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Editors and Affiliations

  1. University of Saskatchewan, Saskatoon, Canada

    Safa Kasap

  2. Formerly with Leonardo MW Ltd, Southampton, UK

    Peter Capper

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Isshiki, M., Wang, J. (2017). Wide-Bandgap II-VI Semiconductors: Growth and Properties. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Cham. https://doi.org/10.1007/978-3-319-48933-9_16

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