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Single-Crystal Silicon: Growth and Properties

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Abstract

It is clear that silicon, which has been the dominant material in the semiconductor industry for some time, will carry us into the coming ultra-large-scale integration (GlossaryTerm

ULSI

) and system-on-a-chip (GlossaryTerm

SOC

) eras, even though silicon is not the optimum choice for every electronic device. Semiconductor devices and circuits are fabricated through many mechanical, chemical, physical, and thermal processes. The preparation of silicon single-crystal substrates with mechanically and chemically polished surfaces is the first step in the long and complex device fabrication process. In this chapter, the approaches currently used to prepare silicon materials (from raw materials to single-crystalline silicon) are discussed.

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Authors and Affiliations

  1. Dept. of Materials and Life Science, Shizuoka Institute of Science and Technology, Fukuroi, Japan

    Fumio Shimura

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  1. Fumio Shimura
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Correspondence to Fumio Shimura .

Editor information

Editors and Affiliations

  1. University of Saskatchewan, Saskatoon, Canada

    Safa Kasap

  2. Formerly with Leonardo MW Ltd, Southampton, UK

    Peter Capper

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Shimura, F. (2017). Single-Crystal Silicon: Growth and Properties. In: Kasap, S., Capper, P. (eds) Springer Handbook of Electronic and Photonic Materials. Springer Handbooks. Springer, Cham. https://doi.org/10.1007/978-3-319-48933-9_13

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