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Bipolar Attributes of Unipolar Junctionless MOSFETs

  • Conference paper
Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

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Abstract

In this work, we present an analysis of bipolar effects in unipolar junctionless (JL) MOSFETs. The reason for dominant bipolar behavior in JL devices in comparison to inversion mode devices has been analyzed. Bipolar induced effects such as steep subthreshold slope, hysteresis in transfer and output characteristics, single transistor latch, and snapback are presented. Results will be useful for identifying advantages and challenges of JL transistors for dynamic memory applications.

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References

  1. C-.W. Lee et al., Applied Physics Lett., vol. 94, 053511, 2009.

    Google Scholar 

  2. C.-W. Lee et al., Applied Physics Lett., vol. 96, 102106, 2010.

    Google Scholar 

  3. J.-P. Colinge et al., Nature Nanotech., vol. 5, pp. 225-229, 2010.

    Article  Google Scholar 

  4. D. Ghosh et al., IEEE Electron Device Lett., vol. 33, pp. 1477-1479, 2012.

    Article  Google Scholar 

  5. A. Kranti et al., Electronics Lett., vol. 46, pp. 1491-1493, 2010.

    Google Scholar 

  6. M.S. Parihar et al., IEEE Trans. Elect. Dev., vol. 60, pp. 1540-1546, 2013.

    Google Scholar 

  7. ATLAS Users Manual, Silvaco.

    Google Scholar 

  8. K.E. Moselund et al., Solid-State Electron., vol. 52, pp. 1336-1344, 2008.

    Google Scholar 

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Acknowledgments

This work is supported by the Science and Engineering Research Board, Department of Science and Technology, Government of India, under Grant SR/S3/EECS/0130/2011.

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Authors and Affiliations

  1. Low Power Nanoelectronics Research Group, Indian Institute of Technology, Indore, India

    Mukta Singh Parihar & Abhinav Kranti

Authors
  1. Mukta Singh Parihar
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  2. Abhinav Kranti
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Corresponding author

Correspondence to Abhinav Kranti .

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Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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Parihar, M.S., Kranti, A. (2014). Bipolar Attributes of Unipolar Junctionless MOSFETs. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_42

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