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Ohmic contacts to AlGaN/GaN HEMTs: A Comparison of Two Different Ti/Al Metaletal Ratios

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

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Abstract

Ohmic contacts formed with two different metal stacks; by varying the Ti/Al thickness ratio were rapid thermal annealed in the temperature range 740–820 °C for 30 s in N2 ambience. The ohmic contact formed with Ti/Al metal thickness ratio 1/5 showed lower Rc values and smoother surface morphology compared to the contact with Ti/Al metal thickness ratio 1/1.5. The difference in behavior for both the contacts was corroborated with the outcome of different metallurgical reactions as observed by X-ray diffraction (XRD) and Energy dispersive X-ray analysis (EDX).

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Acknowledgments

Authors are thankful to Mr Anand for carrying out EDX analysis. Authors are grateful to Dr. R Muralidharan, Director, Solid State Physics Laboratory, Delhi for his guidance and permission to publish this work.

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Authors and Affiliations

  1. Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi, 110054, India

    Somna S. Mahajan, Robert Laishram, Sonalee Kapoor, Anshu Goel, Seema Vinayak & B. K. Sehgal

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  1. Somna S. Mahajan
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  2. Robert Laishram
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  3. Sonalee Kapoor
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  4. Anshu Goel
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  5. Seema Vinayak
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  6. B. K. Sehgal
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Corresponding author

Correspondence to Somna S. Mahajan .

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Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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Mahajan, S.S., Laishram, R., Kapoor, S., Goel, A., Vinayak, S., Sehgal, B.K. (2014). Ohmic contacts to AlGaN/GaN HEMTs: A Comparison of Two Different Ti/Al Metaletal Ratios. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_34

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