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On the Determination of Electron Effective Mass in 2DEGs in Gallium Nitride HEMT Structures

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Physics of Semiconductor Devices

Part of the book series: Environmental Science and Engineering ((ENVENG))

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Abstract

Temperature dependence of the Shubnikov de Haas oscillation observed in the temperature range of 1.8–6 K due to doubly occupied subbands in the two-dimensional electron gas (2DEG) in AlGaN/GaN HEMT structures grown by MBE inhouse has been used to determine the effective mass m* using a novel method of nonlinear curve fitting method which is assigned to be more accurate which is reflected by the R-squared value of the fitting than discussed by previous workers using conventional approximation in linear-curve fitting model. Also the range in which the approximation of the conventional method is valid has been found out.

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Acknowledgments

The corresponding author acknowledges the DST financial assistance received under the grant No.DST/INSPIRE Fellowship/2012/347. The Authors would like to thank Dr. Raghvendra Sahai Saxena, SSPL, Delhi for his useful contribution.

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Authors and Affiliations

  1. Solid State Physics Laboratory, Timarpur, Delhi, India

    Manna Kumari Mishra, Rachna Manchanda, Sushil Lamba, R. K. Sharma & R. Muralidharan

  2. Netaji Subhas Institute of Technology, Dwarka, New Delhi, India

    Manna Kumari Mishra & O. P. Thakur

Authors
  1. Manna Kumari Mishra
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  2. Rachna Manchanda
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  3. Sushil Lamba
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  4. O. P. Thakur
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  5. R. K. Sharma
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  6. R. Muralidharan
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Corresponding author

Correspondence to Manna Kumari Mishra .

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Editors and Affiliations

  1. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    V. K. Jain

  2. Amity Institute for Advanced Research and Studies (Meterials & Devices), Amity University, Noida, Uttar Pradesh, India

    Abhishek Verma

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© 2014 Springer International Publishing Switzerland

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Mishra, M.K., Manchanda, R., Lamba, S., Thakur, O.P., Sharma, R.K., Muralidharan, R. (2014). On the Determination of Electron Effective Mass in 2DEGs in Gallium Nitride HEMT Structures. In: Jain, V., Verma, A. (eds) Physics of Semiconductor Devices. Environmental Science and Engineering(). Springer, Cham. https://doi.org/10.1007/978-3-319-03002-9_24

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