Abstract
Observations of light transmitted along the plane of reverse-biased GaP p-n junctions shows that the depletion layer is birefringent and produces mode confinement of the light. Intensity and phase measurements of the transmitted light are interpreted in terms of a waveguide model which includes effects due to the linear and quadratic electro-optic effects. The latter is invoked to interpret an anomalous modulation most visible in diodes with their junction field in the [100] direction. The origin of the higher optical dielectric constant in the junction, which is mainly responsible for mode confinement, is not as yet understood.
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References
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Nelson, D.F. (1969). The Electro-Optic Effect as a Probe for Studying the Optical Waveguide Properties of P-N Junctions. In: Haidemenakis, E.D. (eds) Electronic Structures in Solids. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-6537-0_11
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DOI: https://doi.org/10.1007/978-1-4899-6537-0_11
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