Abstract
Current and capacitance voltage data obtained using a metal-sputtered oxide-semiconductor capacitor revealed trapping centers similar to those observed in irradiated thermal oxides. A positive charge density of approximately 5 × 1012cm−2 exists in the as-sputtered film and an equivalent amount of charge is present at the silicon/silicon dioxide intgrface. Analysis of current-induced trapping yields a 5 × 10−15cm2 electron capture cross section for a bulk trapping center.
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References
J. R. Sites, P. Gilstrap, and R. Rujkorakarn, Opt. Engr. 22, 447 (1983).
S. Suyama, A. Odamoto, and T. Serikawa, J. Appl. Phys. 62, 2360 (1987).
A. Ourmazd, D. W. Taylor, J. A. Rentschler, and J. Bevk, Phys. Rev. Let. 59, 213 (1987).
S. I. Raider, R. F u tsch, and M. J. Palmer, J. Electrochem. Soc. 122, 413 (1975).
P. Solomon, J. Appl. Phys. 48, 3843 (1977).
R. O. Cale, “Electron Currents in Al/Sí02/Si MOS Capacitors” (Ph.D. Dissertation, Lehigh University, 1984), unpublished.
F. J. Fiegl in VLSI Electronics Microstructure Science N. Einspruch and G. Larrabee, eds. Vol. 6 ( Academic, New York, 1983 ), p. 147.
E.H.Nicollian and J. R. Brews, MOS Physics and Technology ( Wiley, New York, 1982 ).
R. J.Powell and C. N. Berglund, J. Appl. Phys. 42, 4390 (1971).
M. E.Zvanut, F. J. Fiegl, and J. D. Zook, J. Appl. Phys., submitted for publication.
U. Sharma, RCA Rev. 47, 551 (1986).
D. R. Young, in Insulating Films on Semiconductors, G. C. Roberts and M. J. Morant, eds. ( Institute of Physics, London, 1980 ), p. 28.
M. V. Fischetti, J. Appl. Phys. 56, 575 (1984).
T. P. Ma, C. Scoggan, and R. Leone, Appl. Phys. Lett. 27, 61 (1975).
P. S. Winokur, J. M. McGarrity, and H. E. Boesch, Jr., IEEE Trans. Nucl. Sci. NS-23, 1580 (1976).
J. M. Aitken and Dr. R. Young, J. Appl. Phys. 47, 1196 (1976).
T. W. Hickmott, Appl. Phys. Lett. 15, 232 (1969).
M. E. Zvanut, “The Development of Spectroscopic Techniques to Study Defects in Thin Films Silicon Dioxide”, (Ph.D. Dissertation, Lehigh University, 1988), unpublished.
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Zvanut, M.E., Feigl, F.J. (1988). Interface and Bulk Trapping Centers in Low Temperature Ion-Beam Sputtered Silicon Dioxide Films. In: Helms, C.R., Deal, B.E. (eds) The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, Boston, MA. https://doi.org/10.1007/978-1-4899-0774-5_58
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DOI: https://doi.org/10.1007/978-1-4899-0774-5_58
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