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Direct Copper Plating

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Book cover Copper Electrodeposition for Nanofabrication of Electronics Devices

Part of the book series: Nanostructure Science and Technology ((NST))

Abstract

Direct plating is the term used in the damascene interconnect technology when copper (Cu) is plated on a substrate without a copper seed. The conductive copper seed is replaced by a nobler metal such as ruthenium (Ru) or metal compounds such as RuTa or RuTiN alloys in an effort to combine seed and barrier properties into one as the lining thin film material [1]. Copper electrodeposition on top of a foreign substrate by itself is of course not that unusual, copper plated on a platinum rotating disk electrode is quite standard in the lab, but there are many technological complications when bringing it to the wafer scale. In contrast to the conductive platinum disk in the lab, the thin barrier and seed lining layers are resistive which implies a significant potential drop from the wafer edge to the wafer center.

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Authors and Affiliations

  1. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium

    Aleksandar Radisic & Philippe M. Vereecken

Authors
  1. Aleksandar Radisic
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  2. Philippe M. Vereecken
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Correspondence to Philippe M. Vereecken .

Editor information

Editors and Affiliations

  1. Dept. of Chemical Engineering, Osaka Prefecture University, Osaka, Japan

    Kazuo Kondo

  2. Intel Corporation, Hillsboro, Oregon, USA

    Rohan N. Akolkar

  3. Dept. of Chemical Engineering, University of New Hampshire, Durham, New Hampshire, USA

    Dale P. Barkey

  4. Industrial Technology Support Institute, Osaka Prefecture, Japan

    Masayuki Yokoi

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Radisic, A., Vereecken, P.M. (2014). Direct Copper Plating. In: Kondo, K., Akolkar, R., Barkey, D., Yokoi, M. (eds) Copper Electrodeposition for Nanofabrication of Electronics Devices. Nanostructure Science and Technology. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-9176-7_7

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