Abstract
We theoretically investigate vertical high-field transport in semiconductor superlattices, which exhibit self-generated current oscillations and the formation of stable stationary electric field domains depending on the available carrier density. We demonstrate that this behavior is strongly affected by growth-related imperfections like fluctuations of the doping density, the well and the barrier widths. We propose to use this as a novel noninvasive method to detect growth-related disorder in superlattices.
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© 1996 Plenum Press, New York
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Schöll, E., Schwarz, G., Patra, M., Prengel, E., Wacker, A. (1996). Oscillatory Instabilities and Field Domain Formation in Imperfect Superlattices. In: Hess, K., Leburton, JP., Ravaioli, U. (eds) Hot Carriers in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0401-2_42
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DOI: https://doi.org/10.1007/978-1-4613-0401-2_42
Publisher Name: Springer, Boston, MA
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Online ISBN: 978-1-4613-0401-2
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