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Measuring Model Properties in the Laboratory

Direct measurement of device-model properties with test instruments

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Semiconductor Modeling
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Abstract

Modeling is an attempt to represent observations and measurements with mathematical theory. Some model parameters cannot be derived from structure so they must be measured. The measurements of model parameters can be used to verify modeling theory. Engineers gain confidence in the model when parameter predictions are verified by laboratory measurements. In this chapter, we introduce how to measure the parameters for 2-Port Matrix, Scattering-Parameter, SPICE, and IBIS models.

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© 2006 Springer Science+Business Media, LLC

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(2006). Measuring Model Properties in the Laboratory. In: Semiconductor Modeling. Springer, Boston, MA. https://doi.org/10.1007/978-0-387-24160-9_4

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  • DOI: https://doi.org/10.1007/978-0-387-24160-9_4

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-0-387-24159-3

  • Online ISBN: 978-0-387-24160-9

  • eBook Packages: EngineeringEngineering (R0)

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