Abstract
In the paper a new approach to building a νMOS threshold element and an arti cial neuron on its base is discussed The implementability of the known νMOS threshold elements is restricted by the sum of input weights It is shown that by switching the element capacitors in the pre charge phase it is possible to reduce the implementability restriction to the maximum value of the threshold It essentially expands the set of threshold functions realizable on one element.
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Varshavsky, V., Marakhovsky, V. (2001). A Neuron MOS Threshold Element with Switching Capacitors. In: Reusch, B. (eds) Computational Intelligence. Theory and Applications. Fuzzy Days 2001. Lecture Notes in Computer Science, vol 2206. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-45493-4_44
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DOI: https://doi.org/10.1007/3-540-45493-4_44
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