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Far-Infrared cyclotron resonance of hot carriers in InSb

  • Properties of Indium-Antimonide in High Magnetic Fields
  • Conference paper
  • First Online:
Application of High Magnetic Fields in Semiconductor Physics

Part of the book series: Lecture Notes in Physics ((LNP,volume 177))

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Abstract

Far-infrared laser cyclotron resonance has been applied to InSb for the study of the hot carrier system. The hot carriers are produced at 4.2 K or below either by pulsed electric field or by band-gap photoexcitation. Joint application of electric field and photoexcitation is also put on trial. Electrical excitation yields normal orbital electron temperature analysis, whereas optical excitation evokes the spin temperature concept of the conduction electron and enables us to find its spin relaxation time.

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Authors and Affiliations

  1. Department of Physics, College of General Education Osaka University, 560, Toyonaka, Osaka, Japan

    Eizo Otsuka

Authors
  1. Eizo Otsuka
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G. Landwehr

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© 1983 Springer-Verlag

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Otsuka, E. (1983). Far-Infrared cyclotron resonance of hot carriers in InSb. In: Landwehr, G. (eds) Application of High Magnetic Fields in Semiconductor Physics. Lecture Notes in Physics, vol 177. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-11996-5_43

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  • DOI: https://doi.org/10.1007/3-540-11996-5_43

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  • Publisher Name: Springer, Berlin, Heidelberg

  • Print ISBN: 978-3-540-11996-8

  • Online ISBN: 978-3-540-39472-3

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