Abstract
Narrow gap semiconductors typically possess low charge carrier effective masses and relatively high dielectric constants. Consequently, (1) donor and certain acceptor binding energies, Ry*, are small, and (2) carrier interaction energies with a magnetic field, ħw c, are large. For such materials the condition ħw c ⪞ Ry* can be achieved at modest field strengths. The impurity energy level spectra are then qualitatively different from their low field counter-parts. The theory of such impurity states and excitations will be reviewed, particularly with regard to the effects of non-parabolicity in the host crystal band structure. A detailed comparison will be made between theory and experiment for the case of donors in InSb.
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© 1980 Springer-Verlag
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Kaplan, R. (1980). Impurity states in high magnetic fields. In: Zawadzki, W. (eds) Narrow Gap Semiconductors Physics and Applications. Lecture Notes in Physics, vol 133. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-10261-2_40
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DOI: https://doi.org/10.1007/3-540-10261-2_40
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