Abstract
A review is given of the dielectric constant in symmetry-induced zero-gap semiconductors. Based on the random phase approximation we show that the dielectric constant contains an anomalous term which diverges in the infinite wavelength and zero frequency limit. The connection of this anomaly with the degenerate band edge structure is discussed in detail. Experimental verification of the dielectric anomaly is also discussed.
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© 1980 Springer-Verlag
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Liu, L. (1980). Dielectric anomalies in zero-gap semiconductors. In: Zawadzki, W. (eds) Narrow Gap Semiconductors Physics and Applications. Lecture Notes in Physics, vol 133. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-10261-2_34
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DOI: https://doi.org/10.1007/3-540-10261-2_34
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